公开(公告)号：US20210257907A1

公开(公告)日：2021-08-19

申请号：US16851071

申请日：2020-04-16

Applicant: NXP B.V.

Inventor： Suming Lai ,  Kenneth Chung Yin Kwok ,  Fuchun Zhan

IPC: H02M3/07 ,  H02M1/08 ,  H02M1/38 ,  H02J7/00

Abstract: An example method includes controlling a switching order of a plurality of power switches. The power switches are coupled to a flying capacitor and include parasitic bipolar transistors susceptible to the voltage overstress in response to excess stray inductance of the flying capacitor. The method further includes, in response to the controlled switching order, converting an input voltage of a first voltage level to an output voltage of a second voltage level while mitigating the voltage overstress of the parasitic bipolar transistors of the plurality of power switches.

公开(公告)号：US10826482B1

公开(公告)日：2020-11-03

申请号：US16851054

申请日：2020-04-16

Applicant: NXP B.V.

Inventor： Kenneth Chung Yin Kwok ,  Suming Lai ,  Xuechu Li ,  Fuchun Zhan ,  Jian Qing

IPC: H03K17/00 ,  H03K17/082 ,  H01L29/788

Abstract: Aspects of the present disclosure are directed to circuitry to control a gate voltage. As may be implemented in accordance with one or more embodiments, a voltage level is controlled for a field effect transistor (FET) having a floating gate and a target operating voltage above which the FET would be overcharged and around which the FET has a nominal operating range. Pulse circuitry is configured to apply energy to the floating gate in pulses, in operation the applied energy being pulsed low relative to the gate's target operating voltage, and then being changed by adjusting successive pulses until the gate reaches the target operating voltage. A feedback circuit samples a voltage level of, and enables the pulse circuitry to apply pulsed energy to, the floating gate for directing operation of the FET based on the target operating voltage in the nominal operating range.

公开(公告)号：US11381161B2

公开(公告)日：2022-07-05

申请号：US16851071

申请日：2020-04-16

Applicant: NXP B.V.

Inventor： Suming Lai ,  Kenneth Chung Yin Kwok ,  Fuchun Zhan

IPC: H02M3/07 ,  H02M1/08 ,  H02M1/38 ,  H02J7/00 ,  H02J50/10 ,  H02J7/02

Abstract: An example method includes controlling a switching order of a plurality of power switches. The power switches are coupled to a flying capacitor and include parasitic bipolar transistors susceptible to the voltage overstress in response to excess stray inductance of the flying capacitor. The method further includes, in response to the controlled switching order, converting an input voltage of a first voltage level to an output voltage of a second voltage level while mitigating the voltage overstress of the parasitic bipolar transistors of the plurality of power switches.