公开(公告)号：US20150069578A1

公开(公告)日：2015-03-12

申请号：US14204858

申请日：2014-03-11

Applicant: NXP B.V.

Inventor： Hartmut BUENNING ,  Sascha MOELLER ,  Guido ALBERMANN ,  Martin LAPKE ,  Thomas ROHLEDER

IPC: H01L21/78 ,  H01L23/31 ,  H01L21/324

CPC classification number: H01L21/78 ,  H01L21/268 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/784 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2221/6834

Abstract: Consistent with an example embodiment, there is a method for preparing integrated circuit (IC) device die from a wafer substrate having a front-side with active devices and a back-side. The method comprises pre-grinding the backside of a wafer substrate to a thickness. The front-side of the wafer is mounted onto a protective foil. A laser is applied to the backside of the wafer, at first focus depth to define a secondary modification zone in saw lanes. To the backside of the wafer, a second laser process is applied, at a second focus depth shallower than that of the first focus depth, in the saw lanes to define a main modification zone, the secondary modification defined at a pre-determined location within active device boundaries, the active device boundaries defining an active device area. The backside of the wafer is ground down to a depth so as to remove the main modification zone. The IC device die are separated from one another by stretching the protective foil.

Abstract translation: 与示例性实施例一致，存在从具有有源器件和背面的正面的晶片衬底制备集成电路（IC）器件管芯的方法。 该方法包括将晶片衬底的背面预研磨至厚度。 晶片的正面安装在保护箔上。 在第一聚焦深度处将激光施加到晶片的背面，以在锯条中限定二次修饰区。 在晶片的背面，第二激光工艺在第二焦点深度比第一焦点深度浅的第二焦点深度处施加在锯道中，以限定主要修改区域，二次修改被定义在预定位置内 活动设备边界，活动设备边界定义活动设备区域。 将晶片的背面研磨至深度，以便去除主要的修改区域。 通过拉伸保护箔将IC器件芯片彼此分离。