公开(公告)号：US20150069578A1

公开(公告)日：2015-03-12

申请号：US14204858

申请日：2014-03-11

Applicant: NXP B.V.

Inventor： Hartmut BUENNING ,  Sascha MOELLER ,  Guido ALBERMANN ,  Martin LAPKE ,  Thomas ROHLEDER

IPC: H01L21/78 ,  H01L23/31 ,  H01L21/324

CPC classification number: H01L21/78 ,  H01L21/268 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/784 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2221/6834

Abstract: Consistent with an example embodiment, there is a method for preparing integrated circuit (IC) device die from a wafer substrate having a front-side with active devices and a back-side. The method comprises pre-grinding the backside of a wafer substrate to a thickness. The front-side of the wafer is mounted onto a protective foil. A laser is applied to the backside of the wafer, at first focus depth to define a secondary modification zone in saw lanes. To the backside of the wafer, a second laser process is applied, at a second focus depth shallower than that of the first focus depth, in the saw lanes to define a main modification zone, the secondary modification defined at a pre-determined location within active device boundaries, the active device boundaries defining an active device area. The backside of the wafer is ground down to a depth so as to remove the main modification zone. The IC device die are separated from one another by stretching the protective foil.

Abstract translation: 与示例性实施例一致，存在从具有有源器件和背面的正面的晶片衬底制备集成电路（IC）器件管芯的方法。 该方法包括将晶片衬底的背面预研磨至厚度。 晶片的正面安装在保护箔上。 在第一聚焦深度处将激光施加到晶片的背面，以在锯条中限定二次修饰区。 在晶片的背面，第二激光工艺在第二焦点深度比第一焦点深度浅的第二焦点深度处施加在锯道中，以限定主要修改区域，二次修改被定义在预定位置内 活动设备边界，活动设备边界定义活动设备区域。 将晶片的背面研磨至深度，以便去除主要的修改区域。 通过拉伸保护箔将IC器件芯片彼此分离。

公开(公告)号：US20190080963A1

公开(公告)日：2019-03-14

申请号：US15701849

申请日：2017-09-12

Applicant: NXP B.V.

Inventor： Martin LAPKE ,  Hartmut Buenning ,  Sascha MOELLER ,  Guido ALBERMANN ,  Michael ZERNACK ,  Leo M. HIGGINS, III

IPC: H01L21/78 ,  H01L21/268 ,  H01L21/683 ,  H01L21/304

CPC classification number: H01L21/78 ,  B23K26/00 ,  H01L21/268 ,  H01L21/304 ,  H01L21/6836 ,  H01L2221/68336 ,  H01L2221/6834

Abstract: Embodiments are provided herein for separating integrated circuit (IC) device die of a wafer, the wafer having a front side with an active device region and a back side, the active device region having a plurality of active devices arranged in rows and columns and separated by cutting lanes, the method including: attaching the front side of the wafer onto a first dicing tape; forming a modification zone within each cutting lane through the back side of the wafer, wherein each modification zone has a first thickness near a corner of each active device and a second thickness near a center point of each active device, wherein the second thickness is less than the first thickness; and propagating cracks through each cutting lane to separate the plurality of active devices.

公开(公告)号：US20140138855A1

公开(公告)日：2014-05-22

申请号：US13967164

申请日：2013-08-14

Applicant: NXP B.V.

Inventor： Leonardus Antonius Elisabeth VAN GEMERT ,  Hartmut BUENNING ,  Tonny KAMPHUIS ,  Sascha MOELLER ,  Christian ZENZ

IPC: H01L21/782 ,  H01L23/00

CPC classification number: H01L21/782 ,  H01L21/50 ,  H01L21/56 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/31 ,  H01L23/3114 ,  H01L23/3178 ,  H01L23/488 ,  H01L23/49816 ,  H01L24/11 ,  H01L29/0657 ,  H01L2221/68336 ,  H01L2221/68377 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/92125 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/12042 ,  H01L2924/00 ,  H01L2224/81 ,  H01L2224/11 ,  H01L2924/014

Abstract: Consistent with an example embodiment, there is a method for assembling a wafer level chip scale processed (WLCSP) wafer; The wafer has a topside surface and an back-side surface, and a plurality of device die having electrical contacts on the topside surface. The method comprises back-grinding, to a thickness, the back-side surface the wafer. A protective layer of a thickness is molded onto the backside of the wafer. The wafer is mounted onto a sawing foil; along saw lanes of the plurality of device die, the wafer is sawed, the sawing occurring with a blade of a first kerf and to a depth of the thickness of the back-ground wafer. Again, the wafer is sawed along the saw lanes of the plurality of device die, the sawing occurring with a blade of a second kerf, the second kerf narrower than the first kerf, and sawing to a depth of the thickness of the protective layer. The plurality of device die are separated into individual device die. Each individual device die has a protective layer on the back-side, the protective layer having a stand-off distance from a vertical edge of the individual device die.

Abstract translation: 与示例性实施例一致，存在用于组装晶片级芯片尺寸处理（WLCSP）晶片的方法; 晶片具有顶侧表面和背面表面，以及在顶侧表面上具有电触头的多个器件裸片。 该方法包括对晶片的背面进行背面研磨至厚度。 在晶片的背面上模制厚度保护层。 将晶片安装在锯片上; 沿着多个器件裸片的锯条，晶片被锯切，锯切发生在第一切口的刀片和背面晶片厚度的深度上。 再次，晶片沿着多个器件裸片的锯条被锯切，锯切发生在第二切口的刀片上，第二切口比第一切口窄，并锯切到保护层厚度的深度。 将多个器件裸片分离为单个器件管芯。 每个单独的器件管芯在背面具有保护层，保护层具有与单独器件管芯的垂直边缘的间隔距离。

公开(公告)号：US20140110842A1

公开(公告)日：2014-04-24

申请号：US13967084

申请日：2013-08-14

Applicant: NXP B.V.

Inventor： Christian ZENZ ,  Hartmut BUENNING ,  Leonardus Antonius Elisabeth VAN GEMERT ,  Tonny KAMPHUIS ,  Sascha MOELLER

IPC: H01L21/782 ,  H01L23/498

CPC classification number: H01L21/782 ,  H01L21/50 ,  H01L21/56 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/31 ,  H01L23/3114 ,  H01L23/3178 ,  H01L23/488 ,  H01L23/49816 ,  H01L24/11 ,  H01L29/0657 ,  H01L2221/68336 ,  H01L2221/68377 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/92125 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/12042 ,  H01L2924/00 ,  H01L2224/81 ,  H01L2224/11 ,  H01L2924/014

Abstract: Consistent with an example embodiment, there is a semiconductor device, with an active device having a front-side surface and a backside surface; the semiconductor device of an overall thickness, comprises an active device with circuitry defined on the front-side surface, the front-side surface having an area. The back-side of the active device has recesses f a partial depth of the active device thickness and a width of about the partial depth, the recesses surrounding the active device at vertical edges. There is a protective layer of a thickness on to the backside surface of the active device, the protective material having an area greater than the first area and having a stand-off distance. The vertical edges have the protective layer filling the recesses flush with the vertical edges. A stand-off distance of the protective material is a function of the semiconductor device thickness and the tangent of an angle (θ) of tooling impact upon a vertical face the semiconductor device.

Abstract translation: 与示例性实施例一致，存在半导体器件，其中有源器件具有正面和背面; 总体厚度的半导体器件包括具有限定在前侧表面上的电路的有源器件，前侧表面具有区域。 有源器件的背面具有有源器件厚度的部分深度和大约部分深度的宽度的凹部，在垂直边缘处围绕有源器件的凹部。 在有源器件的背面具有厚度的保护层，该保护材料的面积大于第一区域并具有间隔距离。 垂直边缘具有填充与垂直边缘齐平的凹部的保护层。 保护材料的间隔距离是半导体器件厚度和在半导体器件的垂直面上的工具冲击的角度（＆amp;）的切线的函数。