公开(公告)号：US20070111033A1

公开(公告)日：2007-05-17

申请号：US10569600

申请日：2004-08-19

申请人： Naoki Ohashi ,  Hajime Haneda ,  Haruki Ryoken ,  Isao Sakaguchi ,  Yutaka Adachi ,  Tadashi Takenaka

发明人： Naoki Ohashi ,  Hajime Haneda ,  Haruki Ryoken ,  Isao Sakaguchi ,  Yutaka Adachi ,  Tadashi Takenaka

IPC分类号： B32B19/00 ,  B32B9/00 ,  B05D1/36

CPC分类号： H01L29/7787 ,  H01L29/225

摘要： The present invention is effective for causing charge separation by complexing zinc oxide crystals in different states one another when a zinc oxide semiconductor is used as an electronic element. The present invention provides a zinc oxide-based laminated structure comprising two layers of a zinc oxide or zinc oxide solid solution layer with a lattice volume of Va and a donor concentration of Na, and a zinc oxide or zinc oxide solid solution layer with a lattice volume of Vb and a donor concentration of Nb, wherein the relationships of Va Nb being satisfied between both layers of the laminated structures; and the layer with the lattice volume Va serves as a charge-supplying layer and the layer with the lattice volume Vb serves as a charge-receiving layer in the laminated structure. The charge is transferred from the layer serving as the charge-supplying layer to the layer serving as the charge-receiving layer even when no external electric field is applied to the laminated structure; and a charge depletion layer is formed in the charge-supplying layer due to charge transfer from the charge-supplying layer to the charge-receiving layer.

摘要翻译： 当使用氧化锌半导体作为电子元件时，本发明对于通过使不同状态的氧化锌晶体络合而引起电荷分离是有效的。 本发明提供了一种氧化锌基层压结构，其包括晶格体积为Va且施主浓度为Na的氧化锌或氧化锌固溶体层和具有晶格的氧化锌或氧化锌固溶体层的两层 Vb的体积和Nb的供体浓度，其中满足层叠结构的两层之间的Va Nb的关系; 并且具有晶格体积Va的层用作电荷供给层，并且具有晶格体积Vb的层用作层压结构中的电荷接收层。 即使没有外部电场施加到层叠结构，电荷从用作电荷供应层的层转移到用作电荷接收层的层; 并且由于从电荷供给层到电荷接收层的电荷转移，在电荷供给层中形成电荷耗尽层。

公开(公告)号：US08257842B2

公开(公告)日：2012-09-04

申请号：US10569600

申请日：2004-08-19

申请人： Naoki Ohashi ,  Hajime Haneda ,  Haruki Ryoken ,  Isao Sakaguchi ,  Yutaka Adachi ,  Tadashi Takenaka

发明人： Naoki Ohashi ,  Hajime Haneda ,  Haruki Ryoken ,  Isao Sakaguchi ,  Yutaka Adachi ,  Tadashi Takenaka

IPC分类号： B32B19/00 ,  B32B9/00 ,  B05D1/36

CPC分类号： H01L29/7787 ,  H01L29/225

摘要： A zinc oxide semiconductor has a zinc oxide-based laminated structure including two layers of a zinc oxide layer with a lattice volume of Va and a donor concentration of Na, and a zinc oxide or zinc oxide solid solution layer with a lattice volume of Vb and a donor concentration of Nb. The relationships of Va Nb are satisfied. The layer with the lattice volume Va serves as a charge-supplying layer and the layer with the lattice volume Vb serves as a charge-receiving layer in the laminated structure. The charge is transferred from the layer serving as the charge-supplying layer to the layer serving as the charge-receiving layer even when no external electric field is applied to the laminated structure. A charge depletion layer is formed in the charge-supplying layer due to charge transfer from the charge-supplying layer to the charge-receiving layer.

摘要翻译： 氧化锌半导体具有氧化锌系层叠结构，其包含晶格体积为Va且施主浓度为Na的氧化锌层和晶格体积为Vb的氧化锌或氧化锌固溶体层的两层，以及 供体浓度为Nb。 满足Va Nb的关系。 具有晶格体积Va的层用作电荷供给层，并且具有晶格体积Vb的层用作层压结构中的电荷接收层。 即使没有外部电场施加到层叠结构，电荷从用作电荷供给层的层转移到用作电荷接收层的层。 由于从电荷供给层到电荷接收层的电荷转移，在电荷供给层中形成电荷耗尽层。