公开(公告)号：US20090071248A1

公开(公告)日：2009-03-19

申请号：US11577796

申请日：2005-10-14

申请人： Isao Sakaguchi

发明人： Isao Sakaguchi

IPC分类号： G01P15/12

CPC分类号： G01P1/023 ,  G01P15/123 ,  G01P15/18 ,  G01P2015/084

摘要： An acceleration sensor device comprising: an acceleration sensor chip comprising a mass portion, a support frame and flexible arms having piezo-resistors on their top surfaces; and an upper regulation plate having an IC circuit, which is larger in area than the support frame, bonded to a top surface of the support frame; wherein the acceleration sensor chip and the upper regulation plate are placed in a protection case with a lid. The regulation plate protrudes from outside walls of the support frame to partition the space accommodating the chip in the protection case by the protrusion and to prevent air circulation above and below the regulation plate, so that a temperature rise due to the IC circuit among the piezo-resistors provided on the top surfaces of the flexible arms is kept uniform to reduce offset voltage.

摘要翻译： 一种加速度传感器装置，包括：加速度传感器芯片，包括质量部分，支撑框架和在其顶表面上具有压电阻器的柔性臂; 以及具有与支撑框架相比面积大的IC电路的上调节板，结合到支撑框架的顶表面; 其中加速度传感器芯片和上调节板放置在具有盖的保护壳中。 调节板从支撑框架的外壁突出，以通过突起将容纳芯片的空间分隔在保护壳中，并且防止调节板上方和下方的空气循环，使得由压电元件中的IC电路引起的温度升高 设置在柔性臂的顶表面上的电阻器保持均匀以减小偏移电压。

公开(公告)号：US07362209B2

公开(公告)日：2008-04-22

申请号：US10537492

申请日：2003-12-02

申请人： Naoki Ohashi ,  Hajime Haneda ,  Isao Sakaguchi ,  Takeshi Ohgaki ,  Ken Kataoka

发明人： Naoki Ohashi ,  Hajime Haneda ,  Isao Sakaguchi ,  Takeshi Ohgaki ,  Ken Kataoka

IPC分类号： H01C7/10 ,  H01C7/13

CPC分类号： H01C7/112

摘要： Disclosed are a zinc oxide resistor structure, and methods of forming a glass layer and a resistor, which are required for producing the resistor structure. The zinc oxide resistor comprises zinc oxide grains and an oxide glass layer which contains bismuth and boron and intervenes between the zinc oxide grains. The oxide glass layer residing between the zinc oxide grains changes the electric properties between the grains to achieve a higher resistance and a non-ohmic characteristic of a voltage-dependent resistance value in the resistor. This non-ohmic characteristic can be applied, particularly, to a non-ohmic device to be compatible with a low-voltage operation. Differently from conventional resistors, the oxide glass layer intervening between the zinc oxide grains can achieve an enhanced mechanical strength of a junction in the device.

摘要翻译： 公开了一种氧化锌电阻器结构，以及形成电阻器结构所需的玻璃层和电阻器的形成方法。 氧化锌电阻器包括氧化锌晶粒和含有铋和硼并且介于氧化锌晶粒之间的氧化物玻璃层。 位于氧化锌晶粒之间的氧化物玻璃层改变晶粒之间的电特性，以实现电阻器中较高的电阻和非电阻特性的电压依赖性电阻值。 该非欧姆特性可以特别适用于与欧姆电阻器件兼容的低电压工作。 与传统电阻器不同，介于氧化锌晶粒之间的氧化物玻璃层可以实现器件中结的机械强度的增强。

公开(公告)号：US07222536B2

公开(公告)日：2007-05-29

申请号：US11238012

申请日：2005-09-29

申请人： Yoshio Ikeda ,  Masayuki Hosoda ,  Isao Sakaguchi ,  Masakatsu Saitoh

发明人： Yoshio Ikeda ,  Masayuki Hosoda ,  Isao Sakaguchi ,  Masakatsu Saitoh

IPC分类号： G01P15/12

CPC分类号： G01P15/18 ,  G01P15/0802 ,  G01P15/123

摘要： A semiconductor acceleration sensor is disclosed which has a small difference in acceleration detection sensitivity among X, Y, and Z axes and a high detection sensitivity. The acceleration sensor has a mass portion in its center, a support frame surrounding the mass portion, and a plurality of flexible arms connecting the mass portion and the support frame. The flexible arm has wider portions on both ends and a narrower portion between the wider portions. Piezo resistors are restrictedly provided within a top surface region of the wider portion of the flexible arm, and through holes connecting metal wires and the piezo resistors are disposed on the mass portion/support frame. The plurality of flexible arms are symmetric with respect to the center of the mass portion, and each of the flexible arms is symmetric with respect to the center line of the flexible arm.

摘要翻译： 公开了一种半导体加速度传感器，其在X，Y和Z轴之间的加速度检测灵敏度差异较小，检测灵敏度高。 加速度传感器在其中心具有质量部分，围绕质量部分的支撑框架和连接质量部分和支撑框架的多个柔性臂。 柔性臂在两端具有较宽的部分，在较宽部分之间具有较窄的部分。 压电电阻器被限制地设置在柔性臂的较宽部分的顶表面区域内，并且连接金属线和压电电阻器的通孔设置在质量部分/支撑框架上。 多个柔性臂相对于质量部分的中心对称，并且每个柔性臂相对于柔性臂的中心线对称。

公开(公告)号：US20060065054A1

公开(公告)日：2006-03-30

申请号：US11238012

申请日：2005-09-29

申请人： Yoshio Ikeda ,  Masayuki Hosoda ,  Isao Sakaguchi ,  Masakatsu Saitoh

发明人： Yoshio Ikeda ,  Masayuki Hosoda ,  Isao Sakaguchi ,  Masakatsu Saitoh

IPC分类号： G01P15/09 ,  G01P15/12

CPC分类号： G01P15/18 ,  G01P15/0802 ,  G01P15/123

摘要： A semiconductor acceleration sensor is disclosed which has a small difference in acceleration detection sensitivity among X, Y, and Z axes and a high detection sensitivity. The acceleration sensor has a mass portion in its center, a support frame surrounding the mass portion, and a plurality of flexible arms connecting the mass portion and the support frame. The flexible arm has wider portions on both ends and a narrower portion between the wider portions. Piezo resistors are restrictedly provided within a top surface region of the wider portion of the flexible arm, and through holes connecting metal wires and the piezo resistors are disposed on the mass portion/support frame. The plurality of flexible arms are symmetric with respect to the center of the mass portion, and each of the flexible arms is symmetric with respect to the center line of the flexible arm.

摘要翻译： 公开了一种半导体加速度传感器，其在X，Y和Z轴之间的加速度检测灵敏度差异较小，检测灵敏度高。 加速度传感器在其中心具有质量部分，围绕质量部分的支撑框架和连接质量部分和支撑框架的多个柔性臂。 柔性臂在两端具有较宽的部分，在较宽部分之间具有较窄的部分。 压电电阻器被限制地设置在柔性臂的较宽部分的顶表面区域内，并且连接金属线和压电电阻器的通孔设置在质量部分/支撑框架上。 多个柔性臂相对于质量部分的中心对称，并且每个柔性臂相对于柔性臂的中心线对称。

公开(公告)号：US20050141586A1

公开(公告)日：2005-06-30

申请号：US11020445

申请日：2004-12-22

申请人： Isao Sakaguchi ,  Tadayoshi Tanaka

发明人： Isao Sakaguchi ,  Tadayoshi Tanaka

IPC分类号： H05B3/06 ,  F27B3/20 ,  F27D11/02 ,  F27D99/00 ,  H05B3/66 ,  H05B3/62

CPC分类号： H05B3/66

摘要： An electric furnace has a furnace wall, a cylindrical spiral member made of a wire of heat resistant material, a part of the cylindrical portion of which being embedded into the furnace wall and the remaining cylindrical portion of which being projected from an inner surface of the furnace wall, and a heating member inserted into the remaining cylindrical portion of the spiral member. The wire is wound along circles, ellipses, triangles, or quadrangles. The heating member has a circular, quadrangular, triangular or elliptical cross section.

摘要翻译： 电炉具有炉壁，由耐热材料线制成的圆柱形螺旋构件，其圆柱形部分的一部分嵌入炉壁中，其余圆柱形部分从其内表面突出 炉壁和插入螺旋构件的剩余圆筒部的加热构件。 电线绕圆，椭圆，三角形或四边形缠绕。 加热构件具有圆形，四边形，三角形或椭圆形的横截面。

公开(公告)号：US08257842B2

公开(公告)日：2012-09-04

申请号：US10569600

申请日：2004-08-19

申请人： Naoki Ohashi ,  Hajime Haneda ,  Haruki Ryoken ,  Isao Sakaguchi ,  Yutaka Adachi ,  Tadashi Takenaka

发明人： Naoki Ohashi ,  Hajime Haneda ,  Haruki Ryoken ,  Isao Sakaguchi ,  Yutaka Adachi ,  Tadashi Takenaka

IPC分类号： B32B19/00 ,  B32B9/00 ,  B05D1/36

CPC分类号： H01L29/7787 ,  H01L29/225

摘要： A zinc oxide semiconductor has a zinc oxide-based laminated structure including two layers of a zinc oxide layer with a lattice volume of Va and a donor concentration of Na, and a zinc oxide or zinc oxide solid solution layer with a lattice volume of Vb and a donor concentration of Nb. The relationships of Va Nb are satisfied. The layer with the lattice volume Va serves as a charge-supplying layer and the layer with the lattice volume Vb serves as a charge-receiving layer in the laminated structure. The charge is transferred from the layer serving as the charge-supplying layer to the layer serving as the charge-receiving layer even when no external electric field is applied to the laminated structure. A charge depletion layer is formed in the charge-supplying layer due to charge transfer from the charge-supplying layer to the charge-receiving layer.

摘要翻译： 氧化锌半导体具有氧化锌系层叠结构，其包含晶格体积为Va且施主浓度为Na的氧化锌层和晶格体积为Vb的氧化锌或氧化锌固溶体层的两层，以及 供体浓度为Nb。 满足Va Nb的关系。 具有晶格体积Va的层用作电荷供给层，并且具有晶格体积Vb的层用作层压结构中的电荷接收层。 即使没有外部电场施加到层叠结构，电荷从用作电荷供给层的层转移到用作电荷接收层的层。 由于从电荷供给层到电荷接收层的电荷转移，在电荷供给层中形成电荷耗尽层。

公开(公告)号：US20090031803A1

公开(公告)日：2009-02-05

申请号：US11813576

申请日：2006-01-19

申请人： Masaru Noda ,  Isao Sakaguchi

发明人： Masaru Noda ,  Isao Sakaguchi

IPC分类号： G01P15/00

CPC分类号： G01P15/18 ,  A61B5/1117 ,  A61B2562/0219 ,  G01P15/0891 ,  G11B19/04

摘要： A fall detecting method and a device for detecting a fall with high accuracy even when an object touches a human or a thing while falling. The fall detecting device comprises output detecting means for generating an acceleration detection output after comparing the magnitude of acceleration detected by a three-axis acceleration sensor with a certain threshold, output interruption correcting means for generating an output interruption corrected acceleration output which is corrected for an interruption when a fall acceleration output recovers within a first predetermined time after the fall acceleration output interrupts, and output continuation time judging means for generating a fall judgment output when the output interruption corrected acceleration output continues for a second predetermined time longer than the first predetermined time.

摘要翻译： 一种跌落检测方法和即使当物体在跌倒时接触人或物体时也以高精度检测跌落的装置。 坠落检测装置包括输出检测装置，用于在将由三轴加速度传感器检测的加速度的大小与某一阈值进行比较之后产生加速度检测输出;输出中断校正装置，用于产生输出中断校正加速度输出， 当下降加速度输出中断后的第一预定时间内的下降加速度输出恢复时的中断，以及当输出中断校正加速度输出持续比第一预定时间长的第二预定时间时产生下降判断输出的输出持续时间判断装置 。

公开(公告)号：US07145932B2

公开(公告)日：2006-12-05

申请号：US11020445

申请日：2004-12-22

申请人： Isao Sakaguchi ,  Tadayoshi Tanaka

发明人： Isao Sakaguchi ,  Tadayoshi Tanaka

IPC分类号： H05B3/62

CPC分类号： H05B3/66

摘要： An electric furnace has a furnace wall, a cylindrical spiral member made of a wire of heat resistant material, a part of the cylindrical portion of which being embedded into the furnace wall and the remaining cylindrical portion of which being projected from an inner surface of the furnace wall, and a heating member inserted into the remaining cylindrical portion of the spiral member. The wire is wound along circles, ellipses, triangles, or quadrangles. The heating member has a circular, quadrangular, triangular or elliptical cross section.

摘要翻译： 电炉具有炉壁，由耐热材料线制成的圆柱形螺旋构件，其圆柱形部分的一部分嵌入炉壁中，其余圆柱形部分从其内表面突出 炉壁和插入螺旋构件的剩余圆筒部的加热构件。 电线绕圆，椭圆，三角形或四边形缠绕。 加热构件具有圆形，四边形，三角形或椭圆形的横截面。

公开(公告)号：US07063742B1

公开(公告)日：2006-06-20

申请号：US09926188

申请日：2000-03-27

申请人： Toshihiro Ando ,  Yoichiro Sato ,  Eiji Yasu ,  Mika Gamo ,  Isao Sakaguchi

发明人： Toshihiro Ando ,  Yoichiro Sato ,  Eiji Yasu ,  Mika Gamo ,  Isao Sakaguchi

IPC分类号： C30B29/04

CPC分类号： C30B25/105 ,  C30B29/04 ,  Y10S117/902

摘要： A substrate is polished and made an inclined substrate, which is exposed to a hydrogen plasma and is thereby smoothened. The substrate is then heated controlledly until it surface temperature reaches 830° C. Meanwhile, a gas mixture of 1% methane, 50 ppm hydrogen sulfide and hydrogen is introduced in a tubular reaction vessel to flow therethrough at 200 ml/min, where microwave plasma is excited to cause n-type semiconductor diamond to epitaxially grow on the substrate. An ion doped n-type semiconductor is thus formed that has a single donor level of an activation energy at 0.38 eV and is high in mobility and of high quality.

摘要翻译： 抛光衬底并制成倾斜衬底，其暴露于氢等离子体并由此平滑化。 然后将基板受控制地加热直到其表面温度达到830℃。同时，将1％甲烷，50ppm硫化氢和氢气的气体混合物引入管式反应容器中，以200ml / min流过，其中微波等离子体 被激发以使n型半导体金刚石在衬底上外延生长。 因此形成离子掺杂的n型半导体，其具有在0.38eV的激活能的单个施主电平，并且移动性高，质量高。

公开(公告)号：US20110024742A1

公开(公告)日：2011-02-03

申请号：US12934835

申请日：2009-03-18

申请人： Hideyuki Sekiwa ,  Jun Kobayashi ,  Miyuki Miyamoto ,  Naoki Ohashi ,  Isao Sakaguchi ,  Yoshiki Wada

发明人： Hideyuki Sekiwa ,  Jun Kobayashi ,  Miyuki Miyamoto ,  Naoki Ohashi ,  Isao Sakaguchi ,  Yoshiki Wada

IPC分类号： H01L29/22 ,  C30B15/00 ,  C30B15/04

CPC分类号： H01L21/02625 ,  C30B9/08 ,  C30B19/02 ,  C30B29/16 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/02628

摘要： A ZnO single crystal can be grown on a seed crystal substrate using a liquid phase epitaxial growth method by mixing and melting ZnO as a solute and a solvent, bringing the crystal substrate into direct contact with the resultant melt, and pulling up the seed crystal substrate continuously or intermittently. A self-supporting Mg-containing ZnO mixed single crystal wafer can be obtained as follows. A Mg-containing ZnO mixed single crystal is grown using a liquid phase epitaxial growth method by mixing and melting ZnO and MgO forming a solute and a solvent, then bringing a seed crystal substrate into direct contact with the resultant melt, and pulling up the seed crystal substrate continuously or intermittently. Then, the self-supporting Mg-containing ZnO mixed single crystal wafer is obtained by removing the substrate by polishing or etching, and polishing or etching a surface, on the side of −c plane, of the single crystal grown by the liquid phase epitaxial growth method.

摘要翻译： 可以使用液相外延生长法在ZnO晶体基板上生长ZnO单晶，通过将ZnO作为溶质和溶剂进行混合和熔融，使晶体基板与所得熔体直接接触，并拉出晶种基板 连续或间歇地 可以如下获得自支撑Mg的ZnO混合单晶晶片。 使用液相外延生长法，通过混合并熔化形成溶质和溶剂的ZnO和MgO，然后使晶种基材与所得熔体直接接触，并拉出种子，生长含Mg的ZnO混合单晶 晶体基板连续或间歇地。 然后，通过抛光或蚀刻去除衬底，并且通过液相外延生长的单晶的-c面的表面进行抛光或蚀刻来获得自支撑Mg的ZnO混合单晶晶片 生长方式。