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公开(公告)号:US07511324B2
公开(公告)日:2009-03-31
申请号:US11763129
申请日:2007-06-14
申请人: Naoko Unagami , Kenichi Arakawa
发明人: Naoko Unagami , Kenichi Arakawa
IPC分类号: H01L31/112
CPC分类号: H01L27/1463 , H01L27/14623
摘要: A pixel area, which is composed of a plurality of unit pixels each including a photoelectric conversion unit and a signal scanning circuit, is formed on a semiconductor substrate. An optical black pixel region, in which a plurality of optical black pixels for setting a dark-time level are formed, is formed in the pixel area. A barrier layer, which has an impurity concentration that is higher than an impurity concentration of the semiconductor substrate and has a conductivity type that is identical to a conductivity type of the semiconductor substrate, is formed in the optical black pixel region of the semiconductor substrate.
摘要翻译: 在半导体衬底上形成由包括光电转换单元和信号扫描电路的多个单位像素组成的像素区域。 在像素区域中形成有用于设置暗时间电平的多个光学黑色像素的光学黑色像素区域。 在半导体衬底的光学黑色像素区域中形成阻挡层,该阻挡层的杂质浓度高于半导体衬底的杂质浓度并具有与半导体衬底的导电类型相同的导电类型。
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公开(公告)号:US09029749B2
公开(公告)日:2015-05-12
申请号:US13040968
申请日:2011-03-04
申请人: Naoko Unagami , Makoto Monoi , Nagataka Tanaka
发明人: Naoko Unagami , Makoto Monoi , Nagataka Tanaka
IPC分类号: H01L27/148 , H04N5/355 , H01L27/146
CPC分类号: H01L27/148 , H01L27/14627 , H04N5/355
摘要: According to one embodiment, a solid-state imaging device including a plurality of pixels two-dimensionally arranged at a preset pitch in a semiconductor substrate is provided. Each of the pixels is configured to include first and second photodiodes that photoelectrically convert incident light and store signal charges obtained by conversion, a first micro-lens that focuses light on the first photodiode, and a second micro-lens that focuses light on the second photodiode. The saturation charge amount of the second photodiode is larger than that of the first photodiode. Further, the aperture of the second micro-lens is smaller than that of the first micro-lens.
摘要翻译: 根据一个实施例,提供一种固态成像装置,其包括在半导体衬底中以预定间距二维排列的多个像素。 每个像素被配置为包括光电转换入射光并存储通过转换获得的信号电荷的第一和第二光电二极管,将光聚焦在第一光电二极管上的第一微透镜和将光聚焦在第二光电二极管上的第二微透镜 光电二极管 第二光电二极管的饱和电荷量大于第一光电二极管的饱和电荷量。 此外,第二微透镜的孔径小于第一微透镜的孔径。
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