Process of forming field emission electrode for manufacturing field emission array
    1.
    发明申请
    Process of forming field emission electrode for manufacturing field emission array 有权
    制造场致发射阵列的场致发射电极的工艺

    公开(公告)号:US20020102899A1

    公开(公告)日:2002-08-01

    申请号:US09925356

    申请日:2001-08-09

    CPC classification number: H01J9/025

    Abstract: A process of forming a field emission electrode for manufacturing a field emission array is provided. The process includes steps of (a) providing a substrate having a metal layer thereon, (b) forming a plurality of mask units on the metal layer and partially removing the metal layer uncovered by the mask units, (c) oxidizing a surface of the remained metal layer by an anodic oxidization method for forming a metal oxide layer thereon such that an upper portion of the unoxidized remained metal layer is in the shape of plural conoids, and (d) removing the remained mask units and the metal oxide layer. Alternatively, the process includes steps of (a) providing a substrate having a first metal layer thereon, (b) forming a plurality of mask units on the first metal layer and partially removing the first metal layer uncovered by the mask units, (c) oxidizing a surface of the remained first metal layer by an anodic oxidization method for forming a metal oxide layer thereon such that an upper portion of the unoxidized remained first metal layer is in the shape of plural cylinders, (d) forming a second metal layer on the metal oxide layer, and (e) removing the remained mask units.

    Abstract translation: 提供了一种形成用于制造场致发射阵列的场致发射电极的工艺。 该方法包括以下步骤:(a)提供其上具有金属层的基底,(b)在金属层上形成多个掩模单元,并部分去除未被掩模单元覆盖的金属层,(c) 通过用于在其上形成金属氧化物层的阳极氧化方法保留金属层,使得未氧化的残留金属层的上部为多个扁桃状,(d)除去残留的掩模单元和金属氧化物层。 或者,该方法包括以下步骤:(a)提供其上具有第一金属层的基底,(b)在第一金属层上形成多个掩模单元,并部分去除未被掩模单元覆盖的第一金属层,(c) 通过用于在其上形成金属氧化物层的阳极氧化方法氧化残留的第一金属层的表面,使得未氧化的残留的第一金属层的上部为多个圆柱体,(d)在第二金属层上形成第二金属层 金属氧化物层,和(e)去除残留的掩模单元。

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