公开(公告)号：US20150075426A1

公开(公告)日：2015-03-19

申请号：US14158004

申请日：2014-01-17

Applicant: National Taiwan University

Inventor： CHING-FUH LIN ,  Yu-Wen CHENG ,  Hao-Yu WU

IPC: C23C14/22 ,  C23C14/52

CPC classification number: C23C14/52 ,  C23C14/28

Abstract: The present invention relates to a pulsed laser deposition system, and particularly relates to a pulsed laser deposition system capable of using several different targets. In the pulsed laser deposition system, a beam-splitting device is provided to split a UV laser beam into several UV laser beams and to introduce these UV laser beams to different targets simultaneously. Therefore, the pulsed laser deposition system can use several different targets and can be used to form doped epitaxial layer (III-V semiconductor film) and ternary or quaternary epitaxial layer (III-V semiconductor film).

Abstract translation: 脉冲激光沉积系统技术领域本发明涉及一种脉冲激光沉积系统，特别涉及能够使用若干不同目标的脉冲激光沉积系统。 在脉冲激光沉积系统中，提供了一种分束装置，用于将UV激光束分成多个UV激光束并将这些UV激光束同时引入不同的目标。 因此，脉冲激光沉积系统可以使用几个不同的靶，并且可以用于形成掺杂外延层（III-V半导体膜）和三元或四元外延层（III-V半导体膜）。