公开(公告)号：US09520514B2

公开(公告)日：2016-12-13

申请号：US13915497

申请日：2013-06-11

Applicant: National Taiwan University

Inventor： Si-Chen Lee ,  Jheng-Han Lee ,  Zong-Ming Wu

IPC: H01L27/146 ,  H01L31/0352

CPC classification number: H01L31/035218 ,  H01L27/14652 ,  H01L27/14694 ,  H01L31/0352

Abstract: A quantum dot infrared photodetector (QDIP) that can enhance the photocurrent to a greater level than the dark current and/or can be operated at high temperatures is disclosed. The quantum dot infrared photodetector comprises at least one quantum well stack and a plurality of quantum dot layers. The quantum well stack is disposed between the pluralities of quantum dot layers. The quantum well stack comprises two spacer layers and a carrier supplying layer. The carrier supplying layer is disposed between the spacer layers. When the quantum dot infrared photodetector is applied with two bias voltages respectively, the carrier supplying layer supplies carriers to the quantum dot layers.

Abstract translation: 公开了一种量子点红外光电探测器（QDIP），其能够将光电流增强到比暗电流更高的水平和/或可以在高温下操作。 量子点红外光电探测器包括至少一个量子阱堆叠和多个量子点层。 量子阱堆叠设置在多个量子点层之间。 量子阱堆叠包括两个间隔层和载体供应层。 载体供给层设置在间隔层之间。 当量子点红外光电检测器分别施加两个偏置电压时，载体供电层向量子点层提供载流子。

公开(公告)号：US20140361249A1

公开(公告)日：2014-12-11

申请号：US13915497

申请日：2013-06-11

Applicant: National Taiwan University

Inventor： Si-Chen Lee ,  Jheng-Han Lee ,  Zong-Ming Wu

IPC: H01L31/0352 ,  H01L27/146

CPC classification number: H01L31/035218 ,  H01L27/14652 ,  H01L27/14694 ,  H01L31/0352

Abstract: A quantum dot infrared photodetector (QDIP) that can enhance the photocurrent to a greater level than the dark current and/or can be operated at high temperatures is disclosed. The quantum dot infrared photodetector comprises at least one quantum well stack and a plurality of quantum dot layers. The quantum well stack is disposed between the pluralities of quantum dot layers. The quantum well stack comprises two spacer layers and a carrier supplying layer. The carrier supplying layer is disposed between the spacer layers. When the quantum dot infrared photodetector is applied with two bias voltages respectively, the carrier supplying layer supplies carriers to the to quantum dot layers.

Abstract translation: 公开了一种量子点红外光电探测器（QDIP），其能够将光电流增强到比暗电流更高的水平和/或可以在高温下操作。 量子点红外光电探测器包括至少一个量子阱堆叠和多个量子点层。 量子阱堆叠设置在多个量子点层之间。 量子阱堆叠包括两个间隔层和载体供应层。 载体供给层设置在间隔层之间。 当量子点红外光电检测器分别施加两个偏置电压时，载体供电层向量子点层提供载流子。