公开(公告)号：US20250031469A1

公开(公告)日：2025-01-23

申请号：US18383835

申请日：2023-10-25

Applicant: National Taiwan University

Inventor： Ching-Fuh Lin ,  Kun-Rong Lin

IPC: H01L27/146 ,  G02B5/00

Abstract: A light-absorbing structure includes a metal layer composed an inverted truncated-pyramid structure (ITPS) array to absorb an incident light especially in the infrared band. A cross-section of each inverted truncated-pyramid structure includes an upper base and a lower base, where the length of the upper base is greater than the length of the lower base. A photo detector includes a semiconductor layer, the mentioned metal layer, a first electrode, and a second electrode. An upper surface of the semiconductor layer includes an ITPS array and forms a Schottky contact with the metal layer. The first electrode contacts with an upper surface of the metal layer, and the second electrode forms Ohmic contact with a lower surface of the semiconductor layer.