专利检索 ap:("New Jersey Institute of Technology") AND inv:"Ravi Velpula" 第 1 页

1.

发明公开
Resistive Switching in a RRAM Device 审中-公开

公开(公告)号：US20240107904A1

公开(公告)日：2024-03-28

申请号：US18242423

申请日：2023-09-05

申请人： New Jersey Institute of Technology

发明人： Hieu Nguyen , Ravi Velpula , Barsha Jain

IPC分类号： H10N70/00 , H10B63/00

CPC分类号： H10N70/883 , H10B63/80 , H10N70/841

摘要： A resistive random access memory (RRAM) device is provided, and includes a top electrode layer, a bottom electrode layer, and an insulating layer positioned between the top electrode layer and the bottom electrode layer. The insulating layer includes a SiNx layer.