公开(公告)号：US20030226832A1

公开(公告)日：2003-12-11

申请号：US10384439

申请日：2003-03-06

申请人： New Wave Research

发明人： Kuo-Ching Liu ,  Pei Hsien Fang ,  Dan Dere ,  Jenn Liu ,  Jih-Chuang Huang ,  Antonio Lucero ,  Scott Pinkham ,  Steven Oltrogge ,  Duane Middlebusher

IPC分类号： B23K026/36

CPC分类号： B23K26/40 ,  B23K26/032 ,  B23K26/0622 ,  B23K26/073 ,  B23K26/364 ,  B23K2101/40 ,  B23K2103/36 ,  B23K2103/50 ,  B28D5/0011 ,  H01L21/78 ,  H01L33/0095 ,  H01S5/0201 ,  H01S5/0213 ,  H01S5/32341

摘要： A process and system scribe sapphire substrates, by performing the steps of mounting a sapphire substrate, carrying an array of integrated device die, on a stage such as a movable X-Y stage including a vacuum chuck; and directing UV pulses of laser energy directed at a surface of the sapphire substrate using a solid-state laser. The pulses of laser energy have a wavelength below about 560 nanometers, and preferably between about 150 in 560 nanometers. In addition, energy density, spot size, and pulse duration are established at levels sufficient to induce ablation of sapphire. Control of the system, such as by moving the stage with a stationary beam path for the pulses, causes the pulses to contact the sapphire substrate in a scribe pattern at a rate of motion causing overlap of successive pulses sufficient to cut scribe lines in the sapphire substrate.

公开(公告)号：US20030226830A1

公开(公告)日：2003-12-11

申请号：US10364587

申请日：2003-02-11

申请人： New Wave Research

发明人： Kuo-Ching Liu ,  Pei Hsien Fang ,  Dan Dere ,  Jenn Liu ,  Jih-Chuang Huang ,  Antonio Lucero ,  Scott Pinkham ,  Steven Oltrogge ,  Duane Middlebusher

IPC分类号： B23K026/38 ,  B23K026/03 ,  B23K026/14 ,  B23K026/10

CPC分类号： B23K26/40 ,  B23K26/032 ,  B23K26/0622 ,  B23K26/073 ,  B23K26/364 ,  B23K2101/40 ,  B23K2103/36 ,  B23K2103/50 ,  B28D5/0011 ,  H01L21/78 ,  H01L33/0095 ,  H01S5/0201 ,  H01S5/0213 ,  H01S5/32341

摘要： A process and system scribe sapphire substrates, by performing the steps of mounting a sapphire substrate, carrying an array of integrated device die, on a stage such as a movable X-Y stage including a vacuum chuck; and directing UV pulses of laser energy directed at a surface of the sapphire substrate using a solid-state laser. The pulses of laser energy have a wavelength below about 560 nanometers, and preferably between about 150 in 560 nanometers. In addition, energy density, spot size, and pulse duration are established at levels sufficient to induce ablation of sapphire. Control of the system, such as by moving the stage with a stationary beam path for the pulses, causes the pulses to contact the sapphire substrate in a scribe pattern at a rate of motion causing overlap of successive pulses sufficient to cut scribe lines in the sapphire substrate.

摘要翻译： 一种工艺和系统划片蓝宝石衬底，通过在包括真空吸盘的可移动X-Y平台的台上执行将携带集成器件裸片阵列的蓝宝石衬底安装的步骤; 并且使用固态激光器引导指向蓝宝石衬底的表面的激光能量的UV脉冲。 激光能量的脉冲具有低于约560纳米的波长，优选在560纳米之间的约150埃。 此外，能量密度，光斑尺寸和脉冲持续时间建立在足以引起蓝宝石消融的水平上。 系统的控制，例如通过用用于脉冲的固定光束路径移动平台使得脉冲以划线速率以运动速率接触蓝宝石衬底，引起足够切割蓝宝石中划线的连续脉冲的重叠 基质。