MIXED LITHOGRAPHY WITH DUAL RESIST AND A SINGLE PATTERN TRANSFER
    1.
    发明申请
    MIXED LITHOGRAPHY WITH DUAL RESIST AND A SINGLE PATTERN TRANSFER 有权
    具有双重电阻和单模式传输的混合光刻

    公开(公告)号:US20090092799A1

    公开(公告)日:2009-04-09

    申请号:US11867428

    申请日:2007-10-04

    IPC分类号: G03C5/00 G03G7/00

    摘要: An inorganic electron beam sensitive oxide layer is formed on a carbon based material layer or an underlying layer. The inorganic electron beam sensitive oxide layer is exposed with an electron beam and developed to form patterned oxide regions. An ultraviolet sensitive photoresist layer is applied over the patterned oxide regions and exposed surfaces of the carbon based material layer, and subsequently exposed with an ultraviolet radiation and developed. The combined pattern of the patterned ultraviolet sensitive photoresist and the patterned oxide regions is transferred into the carbon based material layer, and subsequently into the underlying layer to form trenches. The carbon based material layer serves as a robust mask for performing additional pattern transfer into the underlying layer, and may be easily stripped afterwards. The patterned ultraviolet sensitive photoresist, the patterned oxide regions, and the patterned carbon based material layer are subsequently removed.

    摘要翻译: 在碳基材料层或下层上形成无机电子束敏感氧化物层。 无机电子束敏感氧化层用电子束曝光并显影以形成图案化氧化物区域。 将紫外线敏感的光致抗蚀剂层施加在图案化的氧化物区域和碳基材料层的暴露表面上,随后用紫外线照射并显影。 图案化紫外光敏光致抗蚀剂和图案化氧化物区域的组合图案被转移到碳基材料层中,随后进入下层以形成沟槽。 碳基材料层用作用于执行额外图案转移到下层中的鲁棒掩模,并且之后可以容易地剥离。 随后去除图案化的紫外线敏感光刻胶,图案化氧化物区域和图案化的碳基材料层。

    Mixed lithography with dual resist and a single pattern transfer
    2.
    发明授权
    Mixed lithography with dual resist and a single pattern transfer 有权
    具有双光栅和单一图案转印的混合光刻

    公开(公告)号:US08334090B2

    公开(公告)日:2012-12-18

    申请号:US13015668

    申请日:2011-01-28

    IPC分类号: G03C5/00

    摘要: An inorganic electron beam sensitive oxide layer is formed on a carbon based material layer or an underlying layer. The inorganic electron beam sensitive oxide layer is exposed with an electron beam and developed to form patterned oxide regions. An ultraviolet sensitive photoresist layer is applied over the patterned oxide regions and exposed surfaces of the carbon based material layer, and subsequently exposed with an ultraviolet radiation and developed. The combined pattern of the patterned ultraviolet sensitive photoresist and the patterned oxide regions is transferred into the carbon based material layer, and subsequently into the underlying layer to form trenches. The carbon based material layer serves as a robust mask for performing additional pattern transfer into the underlying layer, and may be easily stripped afterwards. The patterned ultraviolet sensitive photoresist, the patterned oxide regions, and the patterned carbon based material layer are subsequently removed.

    摘要翻译: 在碳基材料层或下层上形成无机电子束敏感氧化物层。 无机电子束敏感氧化层用电子束曝光并显影以形成图案化氧化物区域。 将紫外线敏感的光致抗蚀剂层施加在图案化的氧化物区域和碳基材料层的暴露表面上,随后用紫外线照射并显影。 图案化紫外光敏光致抗蚀剂和图案化氧化物区域的组合图案被转移到碳基材料层中,随后进入下层以形成沟槽。 碳基材料层用作用于执行额外图案转移到下层中的鲁棒掩模,并且之后可以容易地剥离。 随后去除图案化的紫外线敏感光刻胶,图案化氧化物区域和图案化的碳基材料层。

    MIXED LITHOGRAPHY WITH DUAL RESIST AND A SINGLE PATTERN TRANSFER
    3.
    发明申请
    MIXED LITHOGRAPHY WITH DUAL RESIST AND A SINGLE PATTERN TRANSFER 有权
    具有双重电阻和单模式传输的混合光刻

    公开(公告)号:US20110123779A1

    公开(公告)日:2011-05-26

    申请号:US13015668

    申请日:2011-01-28

    IPC分类号: B32B3/10

    摘要: An inorganic electron beam sensitive oxide layer is formed on a carbon based material layer or an underlying layer. The inorganic electron beam sensitive oxide layer is exposed with an electron beam and developed to form patterned oxide regions. An ultraviolet sensitive photoresist layer is applied over the patterned oxide regions and exposed surfaces of the carbon based material layer, and subsequently exposed with an ultraviolet radiation and developed. The combined pattern of the patterned ultraviolet sensitive photoresist and the patterned oxide regions is transferred into the carbon based material layer, and subsequently into the underlying layer to form trenches. The carbon based material layer serves as a robust mask for performing additional pattern transfer into the underlying layer, and may be easily stripped afterwards. The patterned ultraviolet sensitive photoresist, the patterned oxide regions, and the patterned carbon based material layer are subsequently removed.

    摘要翻译: 在碳基材料层或下层上形成无机电子束敏感氧化物层。 无机电子束敏感氧化层用电子束曝光并显影以形成图案化氧化物区域。 将紫外线敏感的光致抗蚀剂层施加在图案化的氧化物区域和碳基材料层的暴露表面上,随后用紫外线照射并显影。 图案化紫外光敏光致抗蚀剂和图案化氧化物区域的组合图案被转移到碳基材料层中,随后进入下层以形成沟槽。 碳基材料层用作用于执行额外图案转移到下层中的鲁棒掩模,并且之后可以容易地剥离。 随后去除图案化的紫外线敏感光刻胶,图案化氧化物区域和图案化的碳基材料层。

    Mixed lithography with dual resist and a single pattern transfer
    4.
    发明授权
    Mixed lithography with dual resist and a single pattern transfer 有权
    具有双光栅和单一图案转印的混合光刻

    公开(公告)号:US07914970B2

    公开(公告)日:2011-03-29

    申请号:US11867428

    申请日:2007-10-04

    IPC分类号: G03C5/00

    摘要: An inorganic electron beam sensitive oxide layer is formed on a carbon based material layer or an underlying layer. The inorganic electron beam sensitive oxide layer is exposed with an electron beam and developed to form patterned oxide regions. An ultraviolet sensitive photoresist layer is applied over the patterned oxide regions and exposed surfaces of the carbon based material layer, and subsequently exposed with an ultraviolet radiation and developed. The combined pattern of the patterned ultraviolet sensitive photoresist and the patterned oxide regions is transferred into the carbon based material layer, and subsequently into the underlying layer to form trenches. The carbon based material layer serves as a robust mask for performing additional pattern transfer into the underlying layer, and may be easily stripped afterwards. The patterned ultraviolet sensitive photoresist, the patterned oxide regions, and the patterned carbon based material layer are subsequently removed.

    摘要翻译: 在碳基材料层或下层上形成无机电子束敏感氧化物层。 无机电子束敏感氧化层用电子束曝光并显影以形成图案化氧化物区域。 将紫外线敏感的光致抗蚀剂层施加在图案化的氧化物区域和碳基材料层的暴露表面上,随后用紫外线照射并显影。 图案化紫外光敏光致抗蚀剂和图案化氧化物区域的组合图案被转移到碳基材料层中,随后进入下层以形成沟槽。 碳基材料层用作用于执行额外图案转移到下层中的鲁棒掩模,并且之后可以容易地剥离。 随后去除图案化的紫外线敏感光刻胶,图案化氧化物区域和图案化的碳基材料层。