公开(公告)号：US20090092799A1

公开(公告)日：2009-04-09

申请号：US11867428

申请日：2007-10-04

申请人： Nicholas C. Fuller ,  Michael A. Guillorn ,  Balasubramanian S. Pranatharthi Haran ,  Jyotica V. Patel

发明人： Nicholas C. Fuller ,  Michael A. Guillorn ,  Balasubramanian S. Pranatharthi Haran ,  Jyotica V. Patel

IPC分类号： G03C5/00 ,  G03G7/00

CPC分类号： G03F7/0035 ,  Y10S430/143 ,  Y10T428/24612 ,  Y10T428/24802

摘要： An inorganic electron beam sensitive oxide layer is formed on a carbon based material layer or an underlying layer. The inorganic electron beam sensitive oxide layer is exposed with an electron beam and developed to form patterned oxide regions. An ultraviolet sensitive photoresist layer is applied over the patterned oxide regions and exposed surfaces of the carbon based material layer, and subsequently exposed with an ultraviolet radiation and developed. The combined pattern of the patterned ultraviolet sensitive photoresist and the patterned oxide regions is transferred into the carbon based material layer, and subsequently into the underlying layer to form trenches. The carbon based material layer serves as a robust mask for performing additional pattern transfer into the underlying layer, and may be easily stripped afterwards. The patterned ultraviolet sensitive photoresist, the patterned oxide regions, and the patterned carbon based material layer are subsequently removed.

摘要翻译： 在碳基材料层或下层上形成无机电子束敏感氧化物层。 无机电子束敏感氧化层用电子束曝光并显影以形成图案化氧化物区域。 将紫外线敏感的光致抗蚀剂层施加在图案化的氧化物区域和碳基材料层的暴露表面上，随后用紫外线照射并显影。 图案化紫外光敏光致抗蚀剂和图案化氧化物区域的组合图案被转移到碳基材料层中，随后进入下层以形成沟槽。 碳基材料层用作用于执行额外图案转移到下层中的鲁棒掩模，并且之后可以容易地剥离。 随后去除图案化的紫外线敏感光刻胶，图案化氧化物区域和图案化的碳基材料层。

公开(公告)号：US08334090B2

公开(公告)日：2012-12-18

申请号：US13015668

申请日：2011-01-28

申请人： Nicholas C. Fuller ,  Michael A. Guillorn ,  Balasubramanian S. Pranatharthi Haran ,  Jyotica V. Patel

发明人： Nicholas C. Fuller ,  Michael A. Guillorn ,  Balasubramanian S. Pranatharthi Haran ,  Jyotica V. Patel

IPC分类号： G03C5/00

CPC分类号： G03F7/0035 ,  Y10S430/143 ,  Y10T428/24612 ,  Y10T428/24802

摘要： An inorganic electron beam sensitive oxide layer is formed on a carbon based material layer or an underlying layer. The inorganic electron beam sensitive oxide layer is exposed with an electron beam and developed to form patterned oxide regions. An ultraviolet sensitive photoresist layer is applied over the patterned oxide regions and exposed surfaces of the carbon based material layer, and subsequently exposed with an ultraviolet radiation and developed. The combined pattern of the patterned ultraviolet sensitive photoresist and the patterned oxide regions is transferred into the carbon based material layer, and subsequently into the underlying layer to form trenches. The carbon based material layer serves as a robust mask for performing additional pattern transfer into the underlying layer, and may be easily stripped afterwards. The patterned ultraviolet sensitive photoresist, the patterned oxide regions, and the patterned carbon based material layer are subsequently removed.

摘要翻译： 在碳基材料层或下层上形成无机电子束敏感氧化物层。 无机电子束敏感氧化层用电子束曝光并显影以形成图案化氧化物区域。 将紫外线敏感的光致抗蚀剂层施加在图案化的氧化物区域和碳基材料层的暴露表面上，随后用紫外线照射并显影。 图案化紫外光敏光致抗蚀剂和图案化氧化物区域的组合图案被转移到碳基材料层中，随后进入下层以形成沟槽。 碳基材料层用作用于执行额外图案转移到下层中的鲁棒掩模，并且之后可以容易地剥离。 随后去除图案化的紫外线敏感光刻胶，图案化氧化物区域和图案化的碳基材料层。

公开(公告)号：US20110123779A1

公开(公告)日：2011-05-26

申请号：US13015668

申请日：2011-01-28

申请人： Nicholas C. Fuller ,  Michael A. Guillorn ,  Balasubramanian S. Pranatharthi Haran ,  Jyotica V. Patel

发明人： Nicholas C. Fuller ,  Michael A. Guillorn ,  Balasubramanian S. Pranatharthi Haran ,  Jyotica V. Patel

IPC分类号： B32B3/10

CPC分类号： G03F7/0035 ,  Y10S430/143 ,  Y10T428/24612 ,  Y10T428/24802

摘要： An inorganic electron beam sensitive oxide layer is formed on a carbon based material layer or an underlying layer. The inorganic electron beam sensitive oxide layer is exposed with an electron beam and developed to form patterned oxide regions. An ultraviolet sensitive photoresist layer is applied over the patterned oxide regions and exposed surfaces of the carbon based material layer, and subsequently exposed with an ultraviolet radiation and developed. The combined pattern of the patterned ultraviolet sensitive photoresist and the patterned oxide regions is transferred into the carbon based material layer, and subsequently into the underlying layer to form trenches. The carbon based material layer serves as a robust mask for performing additional pattern transfer into the underlying layer, and may be easily stripped afterwards. The patterned ultraviolet sensitive photoresist, the patterned oxide regions, and the patterned carbon based material layer are subsequently removed.

摘要翻译： 在碳基材料层或下层上形成无机电子束敏感氧化物层。 无机电子束敏感氧化层用电子束曝光并显影以形成图案化氧化物区域。 将紫外线敏感的光致抗蚀剂层施加在图案化的氧化物区域和碳基材料层的暴露表面上，随后用紫外线照射并显影。 图案化紫外光敏光致抗蚀剂和图案化氧化物区域的组合图案被转移到碳基材料层中，随后进入下层以形成沟槽。 碳基材料层用作用于执行额外图案转移到下层中的鲁棒掩模，并且之后可以容易地剥离。 随后去除图案化的紫外线敏感光刻胶，图案化氧化物区域和图案化的碳基材料层。

公开(公告)号：US07914970B2

公开(公告)日：2011-03-29

申请号：US11867428

申请日：2007-10-04

申请人： Nicholas C. Fuller ,  Michael A. Guillorn ,  Balasubramanian S. Pranatharthi Haran ,  Jyotica V. Patel

发明人： Nicholas C. Fuller ,  Michael A. Guillorn ,  Balasubramanian S. Pranatharthi Haran ,  Jyotica V. Patel

IPC分类号： G03C5/00

CPC分类号： G03F7/0035 ,  Y10S430/143 ,  Y10T428/24612 ,  Y10T428/24802

摘要： An inorganic electron beam sensitive oxide layer is formed on a carbon based material layer or an underlying layer. The inorganic electron beam sensitive oxide layer is exposed with an electron beam and developed to form patterned oxide regions. An ultraviolet sensitive photoresist layer is applied over the patterned oxide regions and exposed surfaces of the carbon based material layer, and subsequently exposed with an ultraviolet radiation and developed. The combined pattern of the patterned ultraviolet sensitive photoresist and the patterned oxide regions is transferred into the carbon based material layer, and subsequently into the underlying layer to form trenches. The carbon based material layer serves as a robust mask for performing additional pattern transfer into the underlying layer, and may be easily stripped afterwards. The patterned ultraviolet sensitive photoresist, the patterned oxide regions, and the patterned carbon based material layer are subsequently removed.

摘要翻译： 在碳基材料层或下层上形成无机电子束敏感氧化物层。 无机电子束敏感氧化层用电子束曝光并显影以形成图案化氧化物区域。 将紫外线敏感的光致抗蚀剂层施加在图案化的氧化物区域和碳基材料层的暴露表面上，随后用紫外线照射并显影。 图案化紫外光敏光致抗蚀剂和图案化氧化物区域的组合图案被转移到碳基材料层中，随后进入下层以形成沟槽。 碳基材料层用作用于执行额外图案转移到下层中的鲁棒掩模，并且之后可以容易地剥离。 随后去除图案化的紫外线敏感光刻胶，图案化氧化物区域和图案化的碳基材料层。

公开(公告)号：US20090174036A1

公开(公告)日：2009-07-09

申请号：US11969525

申请日：2008-01-04

申请人： Nicholas C. Fuller ,  Michael A. Guillorn ,  Hirohisa Kawasaki ,  Atsushi Yagishita

发明人： Nicholas C. Fuller ,  Michael A. Guillorn ,  Hirohisa Kawasaki ,  Atsushi Yagishita

IPC分类号： H01L29/30 ,  G03F7/26

CPC分类号： G03F7/40

摘要： A methodology is disclosed that enables the fabrication of semiconductor devices (i.e., STI structures, gates, and interconnects) with significantly reduced line edge roughness (LER) and line width roughness (LEW) post lithography patterning. The inventive methodology entails the use of an inert species containing plasma tuned to enhanced its' vacuum ultra violet (VUV) emissions post lithography and/or post one of the etch processes of a given feature (on an identical etch platform) to entice increased crosslinking of one or more patterning materials, thus enabling increased etch resistance and reduced LER and LEW post etching processing.

摘要翻译： 公开了一种能够在光刻图案化之后显着降低线边缘粗糙度（LER）和线宽粗糙度（LEW）来制造半导体器件（即STI结构，栅极和互连）的方法。 本发明的方法需要使用含有等离子体的惰性物质来调整光刻后的真空紫外（VUV）发射和/或给定特征（在相同的蚀刻平台上）的一个蚀刻工艺，以引发增加的交联 的一个或多个图案形成材料，因此能够提高耐蚀刻性和减少LER和LEW后蚀刻处理。

公开(公告)号：US08754530B2

公开(公告)日：2014-06-17

申请号：US12193339

申请日：2008-08-18

申请人： Katherina E. Babich ,  Josephine B. Chang ,  Nicholas C. Fuller ,  Michael A. Guillorn ,  Isaac Lauer ,  Michael J. Rooks

发明人： Katherina E. Babich ,  Josephine B. Chang ,  Nicholas C. Fuller ,  Michael A. Guillorn ,  Isaac Lauer ,  Michael J. Rooks

IPC分类号： H01L23/48

CPC分类号： H01L21/76897 ,  H01L21/76816 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for fabricating a transistor having self-aligned borderless electrical contacts is disclosed. A gate stack is formed on a silicon region. An off-set spacer is formed surrounding the gate stack. A sacrificial layer that includes a carbon-based film is deposited overlying the silicon region, the gate stack, and the off-set spacer. A pattern is defined in the sacrificial layer to define a contact area for the electrical contact. The pattern exposes at least a portion of the gate stack and source/drain. A dielectric layer is deposited overlying the sacrificial layer that has been patterned and the portion of the gate stack that has been exposed. The sacrificial layer that has been patterned is selectively removed to define the contact area at the height that has been defined. The contact area for the height that has been defined is metalized to form the electrical contact.

摘要翻译： 公开了一种制造具有自对准无边界电触头的晶体管的方法。 栅极堆叠形成在硅区域上。 在栅堆叠周围形成偏置的间隔物。 包括碳基膜的牺牲层沉积在硅区域，栅极堆叠和偏置间隔物上。 在牺牲层中限定图案以限定电接触的接触面积。 该图案暴露了栅极堆叠和源极/漏极的至少一部分。 沉积覆盖已经图案化的牺牲层和已经暴露的栅极堆叠的部分的电介质层。 已经图案化的牺牲层被选择性地去除以限定已经定义的高度处的接触面积。 已经定义的高度的接触面积被金属化以形成电接触。

公开(公告)号：US20100038723A1

公开(公告)日：2010-02-18

申请号：US12193339

申请日：2008-08-18

申请人： Katherina E. Babich ,  Josephine B. Chang ,  Nicholas C. Fuller ,  Michael A. Guillorn ,  Isaac Lauer ,  Michael J. Rooks

发明人： Katherina E. Babich ,  Josephine B. Chang ,  Nicholas C. Fuller ,  Michael A. Guillorn ,  Isaac Lauer ,  Michael J. Rooks

IPC分类号： H01L29/00 ,  H01L21/20

CPC分类号： H01L21/76897 ,  H01L21/76816 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for fabricating a transistor having self-aligned borderless electrical contacts is disclosed. A gate stack is formed on a silicon region. An off-set spacer is formed surrounding the gate stack. A sacrificial layer that includes a carbon-based film is deposited overlying the silicon region, the gate stack, and the off-set spacer. A pattern is defined in the sacrificial layer to define a contact area for the electrical contact. The pattern exposes at least a portion of the gate stack and source/drain. A dielectric layer is deposited overlying the sacrificial layer that has been patterned and the portion of the gate stack that has been exposed. The sacrificial layer that has been patterned is selectively removed to define the contact area at the height that has been defined. The contact area for the height that has been defined is metalized to form the electrical contact.

摘要翻译： 公开了一种制造具有自对准无边界电触头的晶体管的方法。 栅极堆叠形成在硅区域上。 在栅堆叠周围形成偏置的间隔物。 包括碳基膜的牺牲层沉积在硅区域，栅极堆叠和偏置间隔物上。 在牺牲层中限定图案以限定电接触的接触面积。 该图案暴露了栅极堆叠和源极/漏极的至少一部分。 沉积覆盖已经图案化的牺牲层和已经暴露的栅极堆叠的部分的电介质层。 已经图案化的牺牲层被选择性地去除以限定已经定义的高度处的接触面积。 已经定义的高度的接触面积被金属化以形成电接触。

公开(公告)号：US09368502B2

公开(公告)日：2016-06-14

申请号：US13274758

申请日：2011-10-17

申请人： Josephine B. Chang ,  Leland Chang ,  Michael A. Guillorn ,  Wilfried E. Haensch

发明人： Josephine B. Chang ,  Leland Chang ,  Michael A. Guillorn ,  Wilfried E. Haensch

IPC分类号： H01L27/108 ,  H01L21/02 ,  H01L21/84 ,  H01L29/78 ,  H01L29/49 ,  H01L29/66

CPC分类号： H01L27/10867 ,  H01L21/845 ,  H01L27/10823 ,  H01L27/10826 ,  H01L27/10829 ,  H01L27/10861 ,  H01L27/10876 ,  H01L27/10879 ,  H01L27/1207 ,  H01L29/0673 ,  H01L29/49 ,  H01L29/66545 ,  H01L29/785

摘要： A memory cell, an array of memory cells, and a method for fabricating a memory cell with multigate transistors such as fully depleted finFET or nano-wire transistors in embedded DRAM. The memory cell includes a trench capacitor, a non-planar transistor, and a self-aligned silicide interconnect electrically coupling the trench capacitor to the non-planar transistor.

摘要翻译： 存储器单元，存储器单元阵列，以及用于制造具有诸如完全耗尽的finFET或嵌入式DRAM中的纳米线晶体管等多重晶体管的存储单元的方法。 存储单元包括沟槽电容器，非平面晶体管和将沟槽电容器电耦合到非平面晶体管的自对准硅化物互连。

公开(公告)号：US09214529B2

公开(公告)日：2015-12-15

申请号：US13047132

申请日：2011-03-14

申请人： Josephine B. Chang ,  Michael A. Guillorn ,  Chung-hsun Lin

发明人： Josephine B. Chang ,  Michael A. Guillorn ,  Chung-hsun Lin

IPC分类号： H01L29/66 ,  H01L27/12 ,  H01L29/78 ,  B82Y10/00

CPC分类号： H01L29/66545 ,  B82Y10/00 ,  H01L27/1211 ,  H01L29/66795 ,  H01L29/7855

摘要： A FinFET device with an independent control gate, including: a silicon-on-insulator substrate; a non-planar multi-gate transistor disposed on the silicon-on-insulator substrate, the transistor comprising a conducting channel wrapped around a thin silicon fin; a source/drain extension region; an independently addressable control gate that is self-aligned to the fin and does not extend beyond the source/drain extension region, the control gate comprising: a thin layer of silicon nitride; and a plurality of spacers.

摘要翻译： 一种具有独立控制栅极的FinFET器件，包括：绝缘体上硅衬底; 设置在绝缘体上硅衬底上的非平面多栅极晶体管，所述晶体管包括围绕薄硅片缠绕的导电沟道; 源极/漏极延伸区域; 独立可寻址的控制栅极，其与所述鳍片自对准并且不延伸超过所述源极/漏极延伸区域，所述控制栅极包括：氮化硅薄层; 和多个间隔件。

公开(公告)号：US08916054B2

公开(公告)日：2014-12-23

申请号：US13281749

申请日：2011-10-26

申请人： Markus Brink ,  Sebastian U. Engelmann ,  Nicholas C. M. Fuller ,  Michael A. Guillorn ,  Hiroyuki Miyazoe ,  Masahiro Nakamura

发明人： Markus Brink ,  Sebastian U. Engelmann ,  Nicholas C. M. Fuller ,  Michael A. Guillorn ,  Hiroyuki Miyazoe ,  Masahiro Nakamura

IPC分类号： B44C1/22 ,  H01L21/033 ,  H01L21/311 ,  G03F7/40 ,  G03F7/09

CPC分类号： G03F7/094 ,  G03F7/091 ,  G03F7/40 ,  H01L21/0332 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/31144 ,  Y10T428/24479

摘要： A stack of a hard mask layer, a soft mask layer, and a photoresist is formed on a substrate. The photoresist is patterned to include at least one opening. The pattern is transferred into the soft mask layer by an anisotropic etch, which forms a carbon-rich polymer that includes more carbon than fluorine. The carbon-rich polymer can be formed by employing a fluorohydrocarbon-containing plasma generated with fluorohydrocarbon molecules including more hydrogen than fluorine. The carbon-rich polymer coats the sidewalls of the soft mask layer, and prevents widening of the pattern transferred into the soft mask. The photoresist is subsequently removed, and the pattern in the soft mask layer is transferred into the hard mask layer. Sidewalls of the hard mask layer are coated with the carbon-rich polymer to prevent widening of the pattern transferred into the hard mask.

摘要翻译： 在基板上形成硬掩模层，软掩模层和光致抗蚀剂的堆叠。 图案化光致抗蚀剂以包括至少一个开口。 该图案通过各向异性蚀刻转移到软掩模层中，其形成包含比氟更多的碳的富碳聚合物。 富含碳的聚合物可以通过使用包含比氟更多的氢的氟代烃分子产生的含氟代烃等离子体形成。 富含碳的聚合物涂覆软掩模层的侧壁，并且防止转移到软掩模中的图案的加宽。 随后去除光致抗蚀剂，并将软掩模层中的图案转移到硬掩模层中。 用富含碳的聚合物涂覆硬掩模层的侧壁以防止转移到硬掩模中的图案变宽。