公开(公告)号：US5517039A

公开(公告)日：1996-05-14

申请号：US339034

申请日：1994-11-14

申请人： Nick Holonyak, Jr. ,  Tim A. Richard ,  Mark R. Keever ,  Fred A. Kish ,  Chun Lei ,  Serge Rudaz

发明人： Nick Holonyak, Jr. ,  Tim A. Richard ,  Mark R. Keever ,  Fred A. Kish ,  Chun Lei ,  Serge Rudaz

IPC分类号： H01L33/14 ,  H01L33/44 ,  H01L33/00

CPC分类号： H01L33/44 ,  H01L33/14

摘要： LEDs and other semiconductor devices fabricated with III-V materials and having exposed Al-bearing surfaces passivated with native oxides are disclosed. A known high temperature water vapor oxidation process is used to passivate the exposed layers of Al-bearing III-V semiconductor materials in confined-emission spot LEDs and other light emitting devices. These devices exhibit greatly improved wet, high temperature operating life, with little to no degradation in light output when exposed to such conditions.

摘要翻译： 公开了用III-V材料制造的LED和其他半导体器件，并且暴露的含Al表面被天然氧化物钝化。 使用已知的高温水蒸气氧化工艺来钝化在受限发射点LED和其它发光器件中的承载III-V族的半导体材料的暴露层。 这些装置显示出大大改善的湿，高温操作寿命，当暴露在这种条件下时，光输出几乎没有甚至没有劣化。