BENT CARBON NANOTUBES AND METHODS OF PRODUCTION
    1.
    发明申请
    BENT CARBON NANOTUBES AND METHODS OF PRODUCTION 审中-公开
    硼碳纳米管及其生产方法

    公开(公告)号:US20150239739A1

    公开(公告)日:2015-08-27

    申请号:US14706793

    申请日:2015-05-07

    IPC分类号: C01B31/00 B01J19/08 C01B31/02

    摘要: A method of producing carbon nanotubes includes directing a flow of a gas over a substrate to provide growth of at least one carbon nanotube in a carbon-nanotube-growth region of the substrate; applying an electric field to the carbon-nanotube-growth region of the substrate after the at least one carbon nanotube has begun to grow in the carbon-nanotube-growth region, the electric field being substantially in a first direction in the carbon-nanotube-growth region; and changing the electric field at a preselected time to be substantially in a second direction in the carbon-nanotube-growth region during growth of the at least one carbon nanotube. The second direction is different from the first direction resulting in a bend substantially at a selected position of the at least one carbon nanotube, the method of producing carbon nanotubes providing the production of the at least one carbon nanotube having at least one bend substantially at a selected position along the at least one carbon nanotube.

    摘要翻译: 制造碳纳米管的方法包括将气体流引导到衬底上以在衬底的碳纳米管生长区域中提供至少一个碳纳米管的生长; 在碳纳米管生长区域中开始生长至少一个碳纳米管之后,在基板的碳纳米管生长区域上施加电场,电场基本上在碳纳米管 - 生长区; 以及在所述至少一个碳纳米管生长期间,在所述碳纳米管生长区域中将预选时间的电场改变为基本上在所述碳纳米管生长区域中的第二方向。 第二方向与第一方向不同,导致基本上在至少一个碳纳米管的选定位置处的弯曲,制造碳纳米管的方法,其提供至少一个碳纳米管的制造,所述碳纳米管具有至少一个弯曲部, 沿着至少一个碳纳米管的选定位置。

    Bent carbon nanotubes and methods of production
    2.
    发明授权
    Bent carbon nanotubes and methods of production 有权
    弯曲碳纳米管和生产方法

    公开(公告)号:US09056777B2

    公开(公告)日:2015-06-16

    申请号:US13119875

    申请日:2009-10-19

    摘要: A method of producing carbon nanotubes includes directing a flow of a gas over a substrate to provide growth of at least one carbon nanotube in a carbon-nanotube-growth region of the substrate; applying an electric field to the carbon-nanotube-growth region of the substrate after the at least one carbon nanotube has begun to grow in the carbon-nanotube-growth region, the electric field being substantially in a first direction in the carbon-nanotube-growth region; and changing the electric field at a preselected time to be substantially in a second direction in the carbon-nanotube-growth region during growth of the at least one carbon nanotube. The second direction is different from the first direction resulting in a bend substantially at a selected position of the at least one carbon nanotube, the method of producing carbon nanotubes providing the production of the at least one carbon nanotube having at least one bend substantially at a selected position along the at least one carbon nanotube.

    摘要翻译: 制造碳纳米管的方法包括将气体流引导到衬底上以在衬底的碳纳米管生长区域中提供至少一个碳纳米管的生长; 在碳纳米管生长区域中开始生长至少一个碳纳米管之后,在基板的碳纳米管生长区域上施加电场,电场基本上在碳纳米管 - 生长区; 以及在所述至少一个碳纳米管生长期间,在所述碳纳米管生长区域中将预选时间的电场改变为基本上在所述碳纳米管生长区域中的第二方向。 第二方向与第一方向不同,导致基本上在至少一个碳纳米管的选定位置处的弯曲,制造碳纳米管的方法,其提供至少一个碳纳米管的制造,所述碳纳米管具有至少一个弯曲部, 沿着至少一个碳纳米管的选定位置。

    BENT CARBON NANOTUBES AND METHODS OF PRODUCTION
    3.
    发明申请
    BENT CARBON NANOTUBES AND METHODS OF PRODUCTION 有权
    硼碳纳米管及其生产方法

    公开(公告)号:US20110171111A1

    公开(公告)日:2011-07-14

    申请号:US13119875

    申请日:2009-10-19

    摘要: A method of producing carbon nanotubes includes directing a flow of a gas over a substrate to provide growth of at least one carbon nanotube in a carbon-nanotube-growth region of the substrate; applying an electric field to the carbon-nanotube-growth region of the substrate after the at least one carbon nanotube has begun to grow in the carbon-nanotube-growth region, the electric field being substantially in a first direction in the carbon-nanotube-growth region; and changing the electric field at a preselected time to be substantially in a second direction in the carbon-nanotube-growth region during growth of the at least one carbon nanotube. The second direction is different from the first direction resulting in a bend substantially at a selected position of the at least one carbon nanotube, the method of producing carbon nanotubes providing the production of the at least one carbon nanotube having at least one bend substantially at a selected position along the at least one carbon nanotube.

    摘要翻译: 制造碳纳米管的方法包括将气体流引导到衬底上以在衬底的碳纳米管生长区域中提供至少一个碳纳米管的生长; 在碳纳米管生长区域中开始生长至少一个碳纳米管之后,在基板的碳纳米管生长区域上施加电场,电场基本上在碳纳米管 - 生长区; 以及在所述至少一个碳纳米管生长期间,在所述碳纳米管生长区域中将预选时间的电场改变为基本上在所述碳纳米管生长区域中的第二方向。 第二方向与第一方向不同,导致基本上在至少一个碳纳米管的选定位置处的弯曲,制造碳纳米管的方法,其提供至少一个碳纳米管的制造,所述碳纳米管具有至少一个弯曲部, 沿着至少一个碳纳米管的选定位置。

    Flux control of qubit under resonant excitation

    公开(公告)号:US11010686B2

    公开(公告)日:2021-05-18

    申请号:US16839011

    申请日:2020-04-02

    申请人: James R. Medford

    发明人: James R. Medford

    IPC分类号: G06N10/00 H04B10/90

    摘要: Systems and methods are provided for flux control of a qubit. A quantum system includes a microwave transmitter configured to provide a continuous microwave tone, and a qubit configured such that transition energy of the qubit between a ground state of the qubit and a first excited state of the qubit is tunable via an applied flux. The qubit also has an inductive element responsive to the continuous microwave tone to produce a Rabi oscillation within the qubit. A flux source is configured to apply a flux to the qubit to selectively tune the transition energy of the qubit, such that the transition energy of the qubit can be tuned to a frequency of the Rabi oscillation or detuned from the Rabi oscillation.

    Push-pull tunable coupling
    5.
    发明授权

    公开(公告)号:US10158343B1

    公开(公告)日:2018-12-18

    申请号:US15868607

    申请日:2018-01-11

    IPC分类号: H03K3/38 H03H11/04 H03K17/92

    摘要: A push-pull tunable coupler includes a push transformer, a pull transformer and two compound Josephson junctions arranged in upper and lower branches. Absent biasing, the balanced push and pull of current between the branches causes current from a first object to circulate within a loop and not to be coupled to a second object. Biasing of at least one of the compound Josephson junctions unbalances the push and pull of current in the branches to couple the first and second objects. The coupler has reduced sensitivity to differential-mode noise around the off state, is completely insensitive to common-mode noise, and is capable of inverting the coupled signal with appropriate relative biasing of the compound Josephson junctions.