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公开(公告)号:US20230216026A1
公开(公告)日:2023-07-06
申请号:US18113641
申请日:2023-02-24
Applicant: NINGDE AMPEREX TECHNOLOGY LIMITED
Inventor: Xiaolang LIU , Molin ZHOU , Leimin XU , Yuhao LU
IPC: H01M4/36 , H01M4/58 , H01M4/04 , H01M4/583 , H01M10/052
CPC classification number: H01M4/364 , H01M4/582 , H01M4/0471 , H01M4/5835 , H01M10/052 , H01M2004/028
Abstract: A positive electrode material, including a composite material, where the composite material includes a metal fluoride, a molar ratio of fluorine F to metal element M in the metal fluoride is y, and a molar ratio of fluorine F to metal element M in the composite material is z, where y
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公开(公告)号:US20220216465A1
公开(公告)日:2022-07-07
申请号:US17700891
申请日:2022-03-22
Applicant: Ningde Amperex Technology Limited
Inventor: ChengBo ZHANG , Yuhao LU , Yuansen XIE
Abstract: A negative electrode material includes a silicon-containing material. The silicon-containing material includes at least one of pure silicon, silicon carbon, a silicon alloy, or a silicon oxide. A ratio B/A of a maximum value B in differentials dQ/dV with respect to 0.4V-0.55V to a maximum value A in differentials dQ/dV with respect to 0.2V-0.35V is 1.0-3.0 when the negative electrode material is electrified in a delithiation direction in a case of charging and discharging a battery that includes the negative electrode material used as a working electrode, metallic lithium used as a counter electrode, and an electrolyte containing a lithium-ion conductive substance, and in a case of plotting a relationship curve between a differential dQ/dV and a working electrode potential V, where the differential is obtained by differentiating a charge/discharge capacity Q with respect to the working electrode potential V.
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公开(公告)号:US20220158175A1
公开(公告)日:2022-05-19
申请号:US17585663
申请日:2022-01-27
Applicant: Ningde Amperex Technology Limited
Inventor: Chengbo ZHANG , Yuhao LU , Yuansen XIE
IPC: H01M4/36 , H01M4/485 , H01M10/0525
Abstract: An anode material includes silicon-based particles, the silicon-based particles include a silicon-containing substrate; at least a part of the surface of the silicon-containing substrate has an MySiOz layer; M includes Li, Mg, Ca, Sr, Ba, Al, Ti, Zn, or any combination thereof; and 0
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