-
1.发明公开公开(公告)号：US20230167359A1
公开(公告)日：2023-06-01
申请号：US18095051
申请日：2023-01-10
发明人： Yosuke Takubo , Ken Tamura , Kazuhiro Nakatsui
CPC分类号： C09K11/70 , C01B25/087 , C07F7/08 , C07F9/06 , C07F9/5009
摘要： The silyl phosphine compound of the present invention is represented by the formula (1) and has an arsenic content of not more than 1 ppm. The process for producing a silyl phosphine compound of the present invention is a process comprising mixing a basic compound, a silylating agent and phosphine to obtain a solution containing a silyl phosphine compound, removing a solvent from the solution to obtain a concentrated solution of a silyl phosphine compound, and distilling the concentrated solution, wherein an arsenic content in the phosphine is adjusted to not more than 1 ppm by volume in terms of arsine. The process for producing InP quantum dots of the present invention uses, as a phosphorus source, a silyl phosphine compound represented by the formula (1) and having an arsenic content of not more than 1 ppm by mass.
(For definition of R, see the specification.)-
公开(公告)号：US20210002548A1
公开(公告)日：2021-01-07
申请号：US16979340
申请日：2019-03-20
发明人： Yosuke Takubo , Ken Tamura , Kazuhiro Nakatsui
摘要： The silyl phosphine compound of the present invention is represented by the formula (1) and has an arsenic content of not more than 1 ppm. The process for producing a silyl phosphine compound of the present invention is a process comprising mixing a basic compound, a silylating agent and phosphine to obtain a solution containing a silyl phosphine compound, removing a solvent from the solution to obtain a concentrated solution of a silyl phosphine compound, and distilling the concentrated solution, wherein an arsenic content in the phosphine is adjusted to not more than 1 ppm by volume in terms of arsine. The process for producing InP quantum dots of the present invention uses, as a phosphorus source, a silyl phosphine compound represented by the formula (1) and having an arsenic content of not more than 1 ppm by mass. (For definition of R, see the specification.)
-
公开(公告)号：US11578266B2
公开(公告)日：2023-02-14
申请号：US16979340
申请日：2019-03-20
发明人： Yosuke Takubo , Ken Tamura , Kazuhiro Nakatsui
摘要： The silyl phosphine compound of the present invention is represented by the formula (1) and has an arsenic content of not more than 1 ppm. The process for producing a silyl phosphine compound of the present invention is a process comprising mixing a basic compound, a silylating agent and phosphine to obtain a solution containing a silyl phosphine compound, removing a solvent from the solution to obtain a concentrated solution of a silyl phosphine compound, and distilling the concentrated solution, wherein an arsenic content in the phosphine is adjusted to not more than 1 ppm by volume in terms of arsine. The process for producing InP quantum dots of the present invention uses, as a phosphorus source, a silyl phosphine compound represented by the formula (1) and having an arsenic content of not more than 1 ppm by mass. (For definition of R, see the specification.)
-
公开(公告)号：US11512103B2
公开(公告)日：2022-11-29
申请号：US17161032
申请日：2021-01-28
发明人： Yosuke Takubo , Ken Tamura
IPC分类号： C07F9/06
摘要： The silyl phosphine compound is represented by the following general formula (1). A content of a compound represented by the following general formula (2) is not more than 0.3 mol %. In the general formula (1), each R is independently an alkyl group having not less than 1 and not more than 5 carbon atoms or an aryl group having not less than 6 and not more than 10 carbon atoms. In the general formula (2), R is the same as in the general formula (1).
-
公开(公告)号：US20210171551A1
公开(公告)日：2021-06-10
申请号：US17161032
申请日：2021-01-28
发明人： Yosuke Takubo , Ken Tamura
IPC分类号： C07F9/06
摘要： The silyl phosphine compound is represented by the following general formula (1). A content of a compound represented by the following general formula (2) is not more than 0.3 mol %. In the general formula (1), each R is independently an alkyl group having not less than 1 and not more than 5 carbon atoms or an aryl group having not less than 6 and not more than 10 carbon atoms. In the general formula (2), R is the same as in the general formula (1).
-
公开(公告)号：US10934316B2
公开(公告)日：2021-03-02
申请号：US16332176
申请日：2017-09-19
发明人： Yosuke Takubo , Ken Tamura
摘要： The process for producing a silyl phosphine compound of the present invention comprises a first step of mixing a solvent having a relative dielectric constant of not more than 4, a basic compound, a silylating agent and phosphine to obtain a solution containing a silyl phosphine compound, a second step of removing the solvent from the solution containing a silyl phosphine compound to obtain a concentrated solution of a silyl phosphine compound, and a third step of distilling the concentrated solution of a silyl phosphine compound to obtain the silyl phosphine compound. The silyl phosphine compound of the present invention is a silyl phosphine compound represented by the following general formula (1), wherein a content of a compound represented by the following general formula (2) is not more than 0.5 mol %. (For explanatory notes of the formulas, see the specification.)
-
公开(公告)号：US20190263845A1
公开(公告)日：2019-08-29
申请号：US16332176
申请日：2017-09-19
发明人： Yosuke Takubo , Ken Tamura
IPC分类号： C07F9/06
摘要： The process for producing a silyl phosphine compound of the present invention comprises a first step of mixing a solvent having a relative dielectric constant of not more than 4, a basic compound, a silylating agent and phosphine to obtain a solution containing a silyl phosphine compound, a second step of removing the solvent from the solution containing a silyl phosphine compound to obtain a concentrated solution of a silyl phosphine compound, and a third step of distilling the concentrated solution of a silyl phosphine compound to obtain the silyl phosphine compound. The silyl phosphine compound of the present invention is a silyl phosphine compound represented by the following general formula (1), wherein a content of a compound represented by the following general formula (2) is not more than 0.5 mol %. (For explanatory notes of the formulas, see the specification.)
-
-
-
-
-
-
搜索结果
7 条记录 (耗时 0.019 秒)
