High-frequency diode oscillator and millimeter-wave transmitting/receiving apparatus
    3.
    发明授权
    High-frequency diode oscillator and millimeter-wave transmitting/receiving apparatus 失效
    高频二极管振荡器和毫米波发射/接收装置

    公开(公告)号:US06744402B2

    公开(公告)日:2004-06-01

    申请号:US10630484

    申请日:2003-07-29

    IPC分类号: G01S1300

    CPC分类号: H03B9/14

    摘要: An object of the present invention is to facilitate positioning of a metal member for mounting a high-frequency diode and of a dielectric strip, thereby remarkably improving control of oscillation characteristics and workability in production. The invention provides a Gunn diode oscillator comprising, between parallel plate conductors disposed at an interval equal to or less than one half of wavelength &lgr; of high-frequency signals, a metal member provided with a Gunn diode device which oscillates high-frequency signals, a choke-type bias supply strip which is made by alternately forming wide strips and narrow strips and which supplies a bias voltage to the Gunn diode device, and a strip conductor which linearly connects the choke-type bias supply strip and the Gunn diode device, and further comprising, in the vicinity of the Gunn diode device, a dielectric strip which is disposed in the vicinity of the Gunn diode device and which receives and propagates high-frequency signals, wherein the cycles of the wide strips and narrow strips of the choke-type bias supply strip are set to approximately &lgr;/4, respectively, and the length of the strip conductor is set to approximately {(¾)+n}&lgr; (n is an integer of 0 or more).

    摘要翻译: 本发明的目的是为了便于定位用于安装高频二极管和介质条的金属构件,从而显着提高振荡特性的控制和制造中的可加工性。 本发明提供了一种耿氏二极管振荡器,其特征在于,在以等于或小于高频信号的波长λ的一半的间隔配置的平行板状导体之间,设置有振荡高频信号的耿氏二极管器件的金属部件, 扼流型偏置电源条,其通过交替地形成宽带和窄条并且向耿氏二极管器件提供偏压而形成;以及带状导体,其直接连接扼流型偏置电源条和耿氏二极管器件,以及 还包括在耿氏二极管器件附近的介质条,其布置在耿氏二极管器件附近并且接收和传播高频信号,其中宽条带和窄条的扼流圈的周期, 分别设置为大约λ/ 4,并且带状导体的长度被设置为大约{(¾)+ n} lambda(n是0或更大的整数) 。

    Junction structure of dielectric strip nonradiative dielectric waveguide and millimeter-wave transmitting/receiving apparatus
    4.
    发明授权
    Junction structure of dielectric strip nonradiative dielectric waveguide and millimeter-wave transmitting/receiving apparatus 失效
    介质条非辐射介质波导和毫米波发射/接收装置的结结构

    公开(公告)号:US06437663B1

    公开(公告)日:2002-08-20

    申请号:US09557860

    申请日:2000-04-26

    IPC分类号: H01P316

    CPC分类号: H01P3/165 H01P5/188

    摘要: An object of the present invention is to provide an NRD guide which can be used in a wide band in a state where output levels of distributed high-frequency signals are nearly equal and does not require precise positioning, thereby enhancing mass productivity thereof. The NRD guide comprises a first straight dielectric strip made of cordierite ceramics having a dielectric constant of 4.8 and a dielectric loss of 2.7×10−4 (at a measurement frequency of 77 GHz) and having a section of 1.0 mm width×2.25 mm height, and a second dielectric strip joined to the first dielectric strip at a midway position thereof so as to be branched along an arc and bent at an angle of 90°, wherein the first and second dielectric strips are integrally produced, and the radius of curvature r of a junction (branched portion) of the second dielectric strip is 12.7 mm, which is larger than the wavelength &lgr;≈5 mm of high-frequency signals of 60 GHz.

    摘要翻译: 本发明的目的是提供一种NRD导向器,其可以在分布式高频信号的输出电平几乎相等并且不需要精确定位的状态下在宽带中使用,从而提高其质量生产率。 NRD引导件包括由堇青石陶瓷制成的介电常数为4.8,介电损耗为2.7×10-4(测量频率为77GHz)并具有1.0mm宽×1.25mm高的截面的第一直线介质条, 以及第二介质条,其在中间位置处连接到第一介质条,以沿着圆弧分支并以90°的角度弯曲,其中第一和第二介质条被一体地制造,并且曲率半径r 第二介质条的接合点(分支部分)为12.7mm,大于60GHz的高频信号的波长≈5mm。

    Pulse modulator for nonradiative dielectric waveguide, and millimeter wave transmitter/receiver using the same
    5.
    发明授权
    Pulse modulator for nonradiative dielectric waveguide, and millimeter wave transmitter/receiver using the same 失效
    用于非辐射介质波导的脉冲调制器,以及使用其的毫米波发射器/接收器

    公开(公告)号:US07068118B2

    公开(公告)日:2006-06-27

    申请号:US10061881

    申请日:2002-01-30

    IPC分类号: H04B1/26 H04M1/00

    CPC分类号: H01P1/383

    摘要: A pulse modulator includes a circulator which comprises: two ferrite plates; a plurality of mode suppressors for transmitting therethrough an LSM mode electromagnetic wave while shutting off an LSE mode electromagnetic wave; and an impedance matching member mounted on one end face of each of the mode suppressors, wherein a pulse modulation switch having a Schottky barrier diode is mounted on the other end face of any one of the mode suppressors in such a manner that the direction of application of a bias voltage to the Schottky barrier diode coincides with the direction of electric field of the LSM mode electromagnetic wave, and wherein the distance from an edge of the ferrite plates to the Schottky barrier diode is set approximately equal to nλ/2. Herein, n is an integer not smaller than 1, and λ is the wavelength of the high frequency signal.

    摘要翻译: 脉冲调制器包括循环器,其包括:两个铁氧体板; 多个模式抑制器,用于在切断LSE模式电磁波的同时通过LSM模式电磁波传输; 以及安装在每个模式抑制器的一个端面上的阻抗匹配构件,其中具有肖特基势垒二极管的脉冲调制开关以这样的方式安装在任何一个模式抑制器的另一端面上: 对肖特基势垒二极管的偏置电压与LSM模式电磁波的电场方向一致,并且其中从铁氧体板的边缘到肖特基势垒二极管的距离设定为近似等于nλ/ 2。 这里,n是不小于1的整数,λ是高频信号的波长。

    High-frequency diode oscillator and millimeter-wave transmitting/receiving apparatus
    6.
    发明授权
    High-frequency diode oscillator and millimeter-wave transmitting/receiving apparatus 失效
    高频二极管振荡器和毫米波发射/接收装置

    公开(公告)号:US06630870B1

    公开(公告)日:2003-10-07

    申请号:US09645100

    申请日:2000-08-23

    IPC分类号: H03B714

    CPC分类号: H03B9/14

    摘要: An object of the present invention is to facilitate positioning of a metal member for mounting a high-frequency diode and of a dielectric strip, thereby remarkably improving control of oscillation characteristics and workability in production. The invention provides a Gunn diode oscillator comprising, between parallel plate conductors disposed at an interval equal to or less than one half of wavelength &lgr; of high-frequency signals, a metal member provided with a Gunn diode device which oscillates high-frequency signals, a choke-type bias supply strip which is made by alternately forming wide strips and narrow strips and which supplies a bias voltage to the Gunn diode device, and a strip conductor which linearly connects the choke-type bias supply strip and the Gunn diode device, and further comprising, in the vicinity of the Gunn diode device, a dielectric strip which is disposed in the vicinity of the Gunn diode device and which receives and propagates high-frequency signals, wherein the cycles of the wide strips and narrow strips of the choke-type bias supply strip are set to approximately &lgr;/4, respectively, and the length of the strip conductor is set to approximately {(3/4)+n}&lgr; (n is an integer of 0 or more).

    摘要翻译: 本发明的目的是为了便于定位用于安装高频二极管和介质条的金属构件,从而显着提高振荡特性的控制和制造中的可加工性。 本发明提供了一种耿氏二极管振荡器,其包括在以等于或小于高频信号波长的一半的间隔布置的平行板导体之间,设置有振荡高频信号的耿氏二极管器件的金属部件, 扼流型偏置电源条,其通过交替地形成宽带和窄条并且向耿氏二极管器件提供偏压而形成;以及带状导体,其直接连接扼流型偏置电源条和耿氏二极管器件,以及 还包括在耿氏二极管器件附近的介质条,其布置在耿氏二极管器件附近并且接收和传播高频信号,其中宽条带和窄条的扼流圈的周期, 分别设置为大约lambd / 4,并且带状导体的长度被设置为大约{(3/4)+ n} lambd(n是0或更大的整数)。

    Junction structure of dielectric strip, nonradiative dielectric waveguide, and millimeter-wave transmitting/receiving apparatus

    公开(公告)号:US06538530B2

    公开(公告)日:2003-03-25

    申请号:US10172188

    申请日:2002-06-14

    IPC分类号: H01P316

    CPC分类号: H01P3/165 H01P5/188

    摘要: An object of the present invention is to provide an NRD guide which can be used in a wide band in a state where output levels of distributed high-frequency signals are nearly equal and does not require precise positioning, thereby enhancing mass productivity thereof. The NRD guide comprises a first straight dielectric strip made of cordierite ceramics having a dielectric constant of 4.8 and a dielectric loss of 2.7×10−4 (at a measurement frequency of 77 GHz) and having a section of 1.0 mm width×2.25 mm height, and a second dielectric strip joined to the first dielectric strip at a midway position thereof so as to be branched along an arc and bent at an angle of 90°, wherein the first and second dielectric strips are integrally produced, and the radius of curvature r of a junction (branched portion) of the second dielectric strip is 12.7 mm, which is larger than the wavelength &lgr;≈5 mm of high-frequency signals of 60 GHz.

    Light Emitting Element Array, Light Emitting Device, and Image Forming Apparatus
    8.
    发明申请
    Light Emitting Element Array, Light Emitting Device, and Image Forming Apparatus 审中-公开
    发光元件阵列,发光元件和成像装置

    公开(公告)号:US20100177155A1

    公开(公告)日:2010-07-15

    申请号:US12666783

    申请日:2008-03-31

    申请人: Hironori Kii

    发明人: Hironori Kii

    IPC分类号: B41J2/435 F21V23/04 H01L33/00

    CPC分类号: B41J2/45

    摘要: Provided are a light emitting element array that can perform a time-division driving operation with a small number of driving ICs and a small-sized light emitting device employing the light emitting element array and an image forming apparatus having the light emitting device. A light emitting element array chip (1) includes n pieces of switch thyristors (S) (n is an integer of 2 or more), n pieces of horizontal gate lines (GH) respectively connected to N gate electrodes of the n pieces of switch thyristors (S), a plurality of light emitting thyristors (T) whose N gate electrodes (b) each is connected to any one of the n horizontal gate lines (GH). One ends of CS resistors (RCS) are connected to the N gate electrodes (d) of the n pieces of switch thyristors (S), and the another ends of the CS resistors (RCS) are connected to a common selection signal input terminal (CS). It is possible to realize time-division driving operation in which a light emission signal and a gate signal are shared between the plurality of light emitting element arrays by allowing only the light emitting element array to which a low level selection signal is inputted and which is in a selected state to emit light.

    摘要翻译: 提供了一种发光元件阵列,其可以使用少量驱动IC和采用该发光元件阵列的小型发光器件和具有该发光器件的图像形成装置进行时分驱动操作。 发光元件阵列芯片(1)包括n个开关晶闸管(S)(n为2以上的整数),n条水平栅极线(GH)分别与n个开关的N个栅电极连接 晶闸管(S),其N个栅电极(b)各自连接到n个水平栅极线(GH)中的任一个的多个发光晶闸管(T)。 CS电阻器(RCS)的一端连接到n个开关晶闸管(S)的N个栅电极(d),CS电阻器(RCS)的另一端连接到公共选择信号输入端子 CS)。 可以实现通过仅允许输入低电平选择信号的发光元件阵列而在多个发光元件阵列之间共享发光信号和栅极信号的时分驱动操作, 处于选择状态以发光。

    Light emitting element array, light emitting device, and image forming apparatus
    9.
    发明授权
    Light emitting element array, light emitting device, and image forming apparatus 失效
    发光元件阵列,发光元件及图像形成装置

    公开(公告)号:US08494415B2

    公开(公告)日:2013-07-23

    申请号:US12280143

    申请日:2007-02-20

    申请人: Hironori Kii

    发明人: Hironori Kii

    摘要: A light emitting element array that can perform a time-division driving operation with a small number of driving ICs is provided. A light emitting element array chip (1) includes n switch thyristors (S) (wherein n is an integer equal to or greater than 2), n signal transmission lines (GH) connected to N-gate electrodes (d) of the switch thyristors (S) individually, a plurality of light emitting thyristors (T) having N-gate electrodes (b) connected to one of the n signal transmission lines (GH). Anodes (e) of selection thyristors (U) are connected to the N-gate electrodes (d) of the n switch thyristors (S), and N-gate electrodes (f) of the selection thyristors (U) are connected to a common selection signal transmission line (CSL).

    摘要翻译: 提供了可以用少量驱动IC执行时分驱动操作的发光元件阵列。 发光元件阵列芯片(1)包括n个开关晶闸管(S)(其中n是等于或大于2的整数),连接到开关晶闸管的N个栅极(d)的n个信号传输线(GH) (S),具有连接到n个信号传输线(GH)之一的N个栅电极(b)的多个发光晶闸管(T)。 选择晶闸管(U)的阳极(e)连接到n个开关晶闸管(S)的N个栅电极(d),并且选择晶闸管(U)的N个栅电极(f)连接到公共 选择信号传输线(CSL)。

    Light Emitting Element Array, Light Emitting Device, and Image Forming Apparatus
    10.
    发明申请
    Light Emitting Element Array, Light Emitting Device, and Image Forming Apparatus 失效
    发光元件阵列,发光元件和成像装置

    公开(公告)号:US20110164103A1

    公开(公告)日:2011-07-07

    申请号:US12280143

    申请日:2007-02-20

    申请人: Hironori Kii

    发明人: Hironori Kii

    IPC分类号: B41J2/385 F21S4/00 H05B37/00

    摘要: A light emitting element array that can perform a time-division driving operation with a small number of driving ICs is provided. A light emitting element array chip (1) includes n switch thyristors (S) (wherein n is an integer equal to or greater than 2), n signal transmission lines (GH) connected to N-gate electrodes (d) of the switch thyristors (S) individually, a plurality of light emitting thyristors (T) having N-gate electrodes (b) connected to one of the n signal transmission lines (GH). Anodes (e) of selection thyristors (U) are connected to the N-gate electrodes (d) of the n switch thyristors (S), and N-gate electrodes (f) of the selection thyristors (U) are connected to a common selection signal transmission line (CSL).

    摘要翻译: 提供了可以用少量驱动IC执行时分驱动操作的发光元件阵列。 发光元件阵列芯片(1)包括n个开关晶闸管(S)(其中n是等于或大于2的整数),连接到开关晶闸管的N个栅极(d)的n个信号传输线(GH) (S),具有连接到n个信号传输线(GH)之一的N个栅电极(b)的多个发光晶闸管(T)。 选择晶闸管(U)的阳极(e)连接到n个开关晶闸管(S)的N个栅电极(d),并且选择晶闸管(U)的N个栅电极(f)连接到公共 选择信号传输线(CSL)。