公开(公告)号：US20080180880A1

公开(公告)日：2008-07-31

申请号：US12010622

申请日：2008-01-28

Applicant: Nobuyuki Okusawa

Inventor： Nobuyuki Okusawa

IPC: H01G9/07

CPC classification number: H01G4/33 ,  H01G4/224 ,  H01L27/016 ,  H01L28/40 ,  H03H2001/0014 ,  H05K1/0306 ,  H05K1/162 ,  H05K3/0023 ,  H05K3/388 ,  H05K2201/0179 ,  H05K2201/0187 ,  H05K2201/09509 ,  H05K2201/096 ,  H05K2203/0733 ,  Y10T29/435

Abstract: There is disclosed a thin film capacitor and the like capable of suppressing fluctuations of a capacity, increasing a VBD, and accordingly improving a device characteristic and reliability of a product. In electronic components 1 to 4, a capacitor 11 is formed on a flat substrate 51 as a base material including a planarization layer 52 formed on the surface thereof. The capacitor 11 has a structure in which a lower conductor 21 constituted of an underlayer conductor 21a and a conductor 21b, a dielectric film 31 made of alumina or the like, a resin layer J1 mainly formed of a novolak resin or the like, a resin layer J2 mainly formed of a polyimide resin or the like, and an upper conductor 25 constituted of an underlayer conductor 25a and a conductor 25b are formed on the planarization layer 52 of the substrate 51. The resin layer J1 has an opening K1 above the lower conductor 21, and the resin layer J2 is provided with an opening K2 opened more widely than the opening K1.

Abstract translation: 公开了能够抑制容量的波动，增加BDB的薄膜电容器等，从而提高产品的器件特性和可靠性。 在电子部件1〜4中，在作为基材的平坦基板51上形成电容器11，该基材包括在其表面上形成的平坦化层52。 电容器11具有下层导体21和导体21b构成的下部导体21，由氧化铝等构成的电介质膜31，主要由酚醛清漆树脂等构成的树脂层J 1 ，主要由聚酰亚胺树脂等形成的树脂层J 2和由下层导体25a和导体25b构成的上导体25形成在基板51的平坦化层52上。树脂层J 1 在下导体21上方具有开口K 1，并且树脂层J 2设置有比开口K 1更宽的开口K 2。

公开(公告)号：US07872853B2

公开(公告)日：2011-01-18

申请号：US12010622

申请日：2008-01-28

Applicant: Nobuyuki Okusawa

Inventor： Nobuyuki Okusawa

IPC: H01G4/06 ,  H01G9/00

CPC classification number: H01G4/33 ,  H01G4/224 ,  H01L27/016 ,  H01L28/40 ,  H03H2001/0014 ,  H05K1/0306 ,  H05K1/162 ,  H05K3/0023 ,  H05K3/388 ,  H05K2201/0179 ,  H05K2201/0187 ,  H05K2201/09509 ,  H05K2201/096 ,  H05K2203/0733 ,  Y10T29/435

Abstract: There is disclosed a thin film capacitor and the like capable of suppressing fluctuations of a capacity, increasing a VBD, and accordingly improving a device. characteristic and reliability of a product. In electronic components 1 to 4, a capacitor 11 is formed on a flat substrate 51 as a base material including a planarization layer 52 formed on the surface thereof. The capacitor 11 has a structure in which a lower conductor 21 constituted of an underlayer conductor 21a and a conductor 21b, a dielectric film 31 made of alumina or the like, a resin layer J1 mainly formed of a novolak resin or the like, a resin layer J2 mainly formed of a polyimide resin or the like, and an upper conductor 25 constituted of an underlayer conductor 25a and a conductor 25b are formed on the planarization layer 52 of the substrate 51. The resin layer J1 has an opening K1 above the lower conductor 21, and the resin layer J2 is provided with an opening K2 opened more widely than the opening K1.

Abstract translation: 公开了能够抑制容量的变动，增加VBD，从而改善装置的薄膜电容器等。 产品的特点和可靠性。 在电子部件1〜4中，在作为基材的平坦基板51上形成电容器11，该基材包括在其表面上形成的平坦化层52。 电容器11具有这样的结构，其中由下层导体21a和导体21b构成的下部导体21，由氧化铝等制成的电介质膜31，主要由酚醛清漆树脂等形成的树脂层J1，树脂 主要由聚酰亚胺树脂等形成的层J2，在基板51的平坦化层52上形成由下层导体25a和导体25b构成的上导体25.树脂层J1的下部开口K1 导体21，并且树脂层J2设置有比开口K1更宽的开口K2。