DISPLAY DEVICE
    2.
    发明申请
    DISPLAY DEVICE 审中-公开
    显示设备

    公开(公告)号:US20070171156A1

    公开(公告)日:2007-07-26

    申请号:US11561173

    申请日:2006-11-17

    IPC分类号: G09G3/30

    摘要: The organic EL display device includes first and second sets of stripe electrodes; third and fourth sets of stripe electrodes crossing the stripe electrodes of the first and second sets; and pixels, each including a light emitting section, one of the electrodes of which is connected electrically to the stripe electrode of the first set, a transistor element connected electrically to the stripe electrode of the fourth set and to the other electrode of the light emitting section, the transistor element controlling the current flowing through the light emitting section, a first rectifying element connected to the gate electrode of the transistor element and the stripe electrode of the second set, a second rectifying element connected to the gate electrode of the transistor element and the stripe electrode of the third set, and a capacitor connected to the gate electrode of the transistor element and the stripe electrode of the fourth set.

    摘要翻译: 有机EL显示装置包括第一和第二组条状电极; 第三和第四组条纹电极与第一和第二组的条形电极交叉; 以及像素,每个像素包括发光部分,其中一个电极与第一组的条形电极电连接,晶体管元件与第四组的条形电极电连接,并连接到发光的另一个电极 控制流过发光部的电流的晶体管元件,与晶体管元件的栅电极连接的第一整流元件和第二组的条状电极,与晶体管元件的栅电极连接的第二整流元件 和第三组的条状电极,以及连接到晶体管元件的栅极和第四组的条形电极的电容器。

    GATE DRIVING CIRCUIT AND METHOD FOR DRIVING SEMICONDUCTOR DEVICE
    3.
    发明申请
    GATE DRIVING CIRCUIT AND METHOD FOR DRIVING SEMICONDUCTOR DEVICE 有权
    门驱动电路及驱动半导体器件的方法

    公开(公告)号:US20090058499A1

    公开(公告)日:2009-03-05

    申请号:US12189319

    申请日:2008-08-11

    IPC分类号: H03K17/60

    CPC分类号: H03K3/012 H03K17/168

    摘要: A gate driving circuit and method can improve the tradeoff relation between the noise and the loss caused in the turn-OFF switching of semiconductor device. The gate driving circuit includes first and second series circuits. The first series circuit includes first and second MOSFETs connected in series. The gate terminal of the semiconductor device is connected to a negative potential side of the first MOSFET and a positive potential side of the second MOSFET. The emitter of the semiconductor device is connected to the negative potential side of the second MOSFET or a DC power source. The second series circuit includes a capacitor and a third MOSFET connected in series. The second series circuit is connected in parallel with the second MOSFET. The semiconductor device is turned OFF by turning ON the second and third MOSFETs and turning OFF the first MOSFET.

    摘要翻译: 栅极驱动电路和方法可以改善噪声与半导体器件的关断开关导致的损耗之间的权衡关系。 栅极驱动电路包括第一和第二串联电路。 第一串联电路包括串联连接的第一和第二MOSFET。 半导体器件的栅极端子连接到第一MOSFET的负电位侧和第二MOSFET的正电位侧。 半导体器件的发射极连接到第二MOSFET的负电位侧或直流电源。 第二串联电路包括串联连接的电容器和第三MOSFET。 第二串联电路与第二MOSFET并联连接。 通过接通第二和第三MOSFET并关闭第一个MOSFET来使半导体器件关断。