Laser-produced plasma EUV light source with isolated plasma
    1.
    发明申请
    Laser-produced plasma EUV light source with isolated plasma 失效
    具有隔离等离子体的激光产生的等离子体EUV光源

    公开(公告)号:US20040262545A1

    公开(公告)日:2004-12-30

    申请号:US10606447

    申请日:2003-06-26

    CPC classification number: H05G2/003 H05G2/006 H05G2/008

    Abstract: An EUV radiation source (40) that includes a nozzle (42) positioned a far enough distance away from a target region (50) so that EUV radiation (56) generated at the target region (50) by a laser beam (54) impinging a target stream (46) emitted from the nozzle (42) is not significantly absorbed by target vapor proximate the nozzle (42). Also, the EUV radiation (56) does not significantly erode the nozzle (42) and contaminate source optics (34). In one embodiment, the nozzle (42) is more than 10 cm away from the target region (50).

    Abstract translation: EUV辐射源(40),其包括位于离目标区域(50)远足够距离的喷嘴(42),使得通过激光束(54)在目标区域(50)处产生的EUV辐射(56)撞击 从喷嘴(42)发射的目标物流(46)不被靠近喷嘴(42)的目标蒸气显着吸收。 此外,EUV辐射(56)不会显着地侵蚀喷嘴(42)并污染源光学器件(34)。 在一个实施例中,喷嘴(42)距离目标区域(50)大10cm。

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