公开(公告)号：US11522010B2

公开(公告)日：2022-12-06

申请号：US16544212

申请日：2019-08-19

申请人： Northrop Grumman Systems Corporation

发明人： Patrick B. Shea ,  Robert M. Young ,  Keith H. Chung ,  Andris Ezis ,  Ishan Wathuthanthri

IPC分类号： H01L27/24 ,  H01L45/00 ,  H01L21/8249

摘要： A method of integrating a phase change switch (PCS) into a Bipolar (Bi)/Complementary Metal Oxide Semiconductor (CMOS) (BiCMOS) process, comprises providing a base structure including BiCMOS circuitry on a semiconductor substrate, and forming on the base structure a dielectric contact window layer having metal through-plugs that contact the BiCMOS circuitry. The method includes constructing the PCS on the contact window layer. The PCS includes: a phase change region, between ohmic contacts on the phase change region, to operate as a switch controlled by heat. The method further includes forming, on the contact window layer and the PCS, a stack of alternating patterned metal layers and dielectric layers that interconnect the patterned metal layers, such that the stack connects a first of the ohmic contacts to the BiCMOS circuitry and provides connections to a second of the ohmic contacts and to the resistive heater.

公开(公告)号：US20230056901A1

公开(公告)日：2023-02-23

申请号：US17981744

申请日：2022-11-07

申请人： Northrop Grumman Systems Corporation

发明人： Patrick B. Shea ,  Robert M. Young ,  Keith H. Chung ,  Andris Ezis ,  Ishan Wathuthanthri

IPC分类号： H01L27/24 ,  H01L45/00 ,  H01L21/8249

摘要： A method of integrating a phase change switch (PCS) into a Bipolar (Bi)/Complementary Metal Oxide Semiconductor (CMOS) (BiCMOS) process, comprises providing a base structure including BiCMOS circuitry on a semiconductor substrate, and forming on the base structure a dielectric contact window layer having metal through-plugs that contact the BiCMOS circuitry. The method includes constructing the PCS on the contact window layer. The PCS includes: a phase change region, between ohmic contacts on the phase change region, to operate as a switch controlled by heat. The method further includes forming, on the contact window layer and the PCS, a stack of alternating patterned metal layers and dielectric layers that interconnect the patterned metal layers, such that the stack connects a first of the ohmic contacts to the BiCMOS circuitry and provides connections to a second of the ohmic contacts and to the resistive heater.

公开(公告)号：US20210057487A1

公开(公告)日：2021-02-25

申请号：US16544212

申请日：2019-08-19

申请人： Northrop Grumman Systems Corporation

发明人： Patrick B. Shea ,  Robert M. Young ,  Keith H. Chung ,  Andris Ezis ,  Ishan Wathuthanthri

IPC分类号： H01L27/24 ,  H01L45/00 ,  H01L21/8249

摘要： A method of integrating a phase change switch (PCS) into a Bipolar (Bi)/Complementary Metal Oxide Semiconductor (CMOS) (BiCMOS) process, comprises providing a base structure including BiCMOS circuitry on a semiconductor substrate, and forming on the base structure a dielectric contact window layer having metal through-plugs that contact the BiCMOS circuitry. The method includes constructing the PCS on the contact window layer. The PCS includes: a phase change region, between ohmic contacts on the phase change region, to operate as a switch controlled by heat. The method further includes forming, on the contact window layer and the PCS, a stack of alternating patterned metal layers and dielectric layers that interconnect the patterned metal layers, such that the stack connects a first of the ohmic contacts to the BiCMOS circuitry and provides connections to a second of the ohmic contacts and to the resistive heater.