公开(公告)号：US20140302689A1

公开(公告)日：2014-10-09

申请号：US14249272

申请日：2014-04-09

Applicant: Novellus Systems, Inc.

Inventor： Kaihan Ashtiani ,  Michael Wood ,  John Drewery ,  Naohiro Shoda ,  Bart van Schravendijk ,  Lakshminarayana Nittala ,  Nerissa Draeger

IPC: H01L21/02

CPC classification number: H01L21/02274 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02208 ,  H01L21/76224

Abstract: Methods for depositing flowable dielectric films are provided. In some embodiments, the methods involve introducing a silicon-containing precursor to a deposition chamber wherein the precursor is characterized by having a partial pressure:vapor pressure ratio between 0.01 and 1. In some embodiments, the methods involve depositing a high density plasma dielectric film on a flowable dielectric film. The high density plasma dielectric film may fill a gap on a substrate. Also provided are apparatuses for performing the methods.

Abstract translation: 提供了用于沉积可流动介电膜的方法。 在一些实施方案中，所述方法包括向沉积室引入含硅前体，其中所述前体的特征在于具有0.01至1的分压：蒸气压比。在一些实施方案中，所述方法包括沉积高密度等离子体电介质膜 在可流动的电介质膜上。 高密度等离子体电介质膜可以填充衬底上的间隙。 还提供了用于执行方法的装置。