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    FLOWABLE OXIDE FILM WITH TUNABLE WET ETCH RATE
    1.
    发明申请
    FLOWABLE OXIDE FILM WITH TUNABLE WET ETCH RATE 审中-公开
    可流动的氧化硅膜，具有可调节的湿度

    公开(公告)号：US20150044882A1

    公开(公告)日：2015-02-12

    申请号：US14466222

    申请日：2014-08-22

    Applicant: Novellus Systems, Inc.

    Inventor： Nerissa Draeger ,  Karena Shannon ,  Bart van Schravendijk ,  Kaihan Ashtiani

    IPC: H01L21/02

    CPC classification number: H01L21/0234 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02299 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/02348 ,  H01L21/31111

    Abstract: Provided herein are integration-compatible dielectric films and methods of depositing and modifying them. According to various embodiments, the methods can include deposition of flowable dielectric films targeting specific film properties and/or modification of those properties with an integration-compatible treatment process. In certain embodiments, methods of depositing and modifying flowable dielectric films having tunable wet etch rates and other properties are provided. Wet etch rates can be tuned during integration through am integration-compatible treatment process. Examples of treatment processes include plasma exposure and ultraviolet radiation exposure.

    Abstract translation: 本文提供了集成兼容的介电膜以及它们的沉积和修饰方法。 根据各种实施方案，该方法可以包括以集成兼容的处理方法沉积靶向特定膜特性的可流动电介质膜和/或对这些性质的修饰。 在某些实施方案中，提供了沉积和修饰具有可调湿蚀刻速率和其它性质的可流动介电膜的方法。 湿法蚀刻速率可以通过整合兼容的处理过程进行整合。 处理过程的实例包括等离子体暴露和紫外线照射。

    METHOD FOR DEPOSITING A CHLORINE-FREE CONFORMAL SIN FILM
    2.
    发明申请
    METHOD FOR DEPOSITING A CHLORINE-FREE CONFORMAL SIN FILM 审中-公开
    用于沉积无氯的一致性膜的方法

    公开(公告)号：US20140141626A1

    公开(公告)日：2014-05-22

    申请号：US14065334

    申请日：2013-10-28

    Applicant: Novellus Systems, Inc.

    Inventor： Dennis Hausmann ,  Jon Henri ,  Bart van Schravendijk ,  Easwar Srinivasan

    IPC: H01L21/02

    CPC classification number: C23C16/345 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/45557 ,  C23C16/505 ,  C23C16/52 ,  C23C16/54 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L29/7843

    Abstract: Described are methods of making silicon nitride (SiN) materials on substrates. Improved SiN films made by the methods are also included. One aspect relates to depositing chlorine (Cl)-free conformal SiN films. In some embodiments, the SiN films are Cl-free and carbon (C)-free. Another aspect relates to methods of tuning the stress and/or wet etch rate of conformal SiN films. Another aspect relates to low-temperature methods of depositing high quality conformal SiN films. In some embodiments, the methods involve using trisilylamine (TSA) as a silicon-containing precursor.

    Abstract translation: 描述了在衬底上制造氮化硅（SiN）材料的方法。 还包括通过这些方法制备的改进的SiN膜。 一方面涉及沉积无氯（Cl）的保形SiN膜。 在一些实施例中，SiN膜是无Cl且不含碳（C）。 另一方面涉及调整共形SiN膜的应力和/或湿蚀刻速率的方法。 另一方面涉及沉积高质量共形SiN膜的低温方法。 在一些实施方案中，所述方法包括使用三甲硅烷胺（TSA）作为含硅前体。

    METHOD FOR DEPOSITING A CHLORINE-FREE CONFORMAL SIN FILM
    4.
    发明申请
    METHOD FOR DEPOSITING A CHLORINE-FREE CONFORMAL SIN FILM 审中-公开
    用于沉积无氯的一致性膜的方法

    公开(公告)号：US20150259791A1

    公开(公告)日：2015-09-17

    申请号：US14713639

    申请日：2015-05-15

    Applicant: Novellus Systems, Inc.

    Inventor： Dennis Hausmann ,  Jon Henri ,  Bart van Schravendijk ,  Easwar Srinivasan

    IPC: C23C16/34 ,  C23C16/455 ,  C23C16/52

    CPC classification number: C23C16/345 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/45557 ,  C23C16/505 ,  C23C16/52 ,  C23C16/54 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L29/7843

    Abstract: Described are methods of making silicon nitride (SiN) materials on substrates. Improved SiN films made by the methods are also included. One aspect relates to depositing chlorine (Cl)-free conformal SiN films. In some embodiments, the SiN films are Cl-free and carbon (C)-free. Another aspect relates to methods of tuning the stress and/or wet etch rate of conformal SiN films. Another aspect relates to low-temperature methods of depositing high quality conformal SiN films. In some embodiments, the methods involve using trisilylamine (TSA) as a silicon-containing precursor.

    Abstract translation: 描述了在衬底上制造氮化硅（SiN）材料的方法。 还包括通过这些方法制备的改进的SiN膜。 一方面涉及沉积无氯（Cl）的保形SiN膜。 在一些实施例中，SiN膜是无Cl且不含碳（C）。 另一方面涉及调整共形SiN膜的应力和/或湿蚀刻速率的方法。 另一方面涉及沉积高质量共形SiN膜的低温方法。 在一些实施方案中，所述方法包括使用三甲硅烷胺（TSA）作为含硅前体。

    CONFORMAL FILM DEPOSITION FOR GAPFILL
    7.
    发明申请
    CONFORMAL FILM DEPOSITION FOR GAPFILL 有权
    适合胶片的胶片沉积

    公开(公告)号：US20140134827A1

    公开(公告)日：2014-05-15

    申请号：US14074596

    申请日：2013-11-07

    Applicant: Novellus Systems, Inc.

    Inventor： Shankar Swaminathan ,  Bart van Schravendijk ,  Adrien Lavoie ,  Sesha Varadarajan ,  Jason Daejin Park ,  Michal Danek ,  Naohiro Shoda

    IPC: H01L21/762 ,  H01L21/67

    CPC classification number: H01L21/76224 ,  C23C16/045 ,  C23C16/45523 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/67017

    Abstract: A method and apparatus for conformally depositing a dielectric oxide in high aspect ratio gaps in a substrate is disclosed. A substrate is provided with one or more gaps into a reaction chamber where each gap has a depth to width aspect ratio of greater than about 5:1. A first dielectric oxide layer is deposited in the one or more gaps by CFD. A portion of the first dielectric oxide layer is etched using a plasma etch, where etching the portion of the first dielectric oxide layer occurs at a faster rate near a top surface than near a bottom surface of each gap so that the first dielectric oxide layer has a tapered profile from the top surface to the bottom surface of each gap. A second dielectric oxide layer is deposited in the one or more gaps over the first dielectric oxide layer via CFD.

    Abstract translation: 公开了一种用于在衬底中的高纵横比间隙中共形沉积介电氧化物的方法和装置。 衬底在反应室中具有一个或多个间隙，其中每个间隙具有大于约5:1的深宽比。 第一电介质氧化物层通过CFD沉积在一个或多个间隙中。 使用等离子体蚀刻蚀刻第一电介质氧化物层的一部分，其中蚀刻第一电介质氧化物层的部分以比在每个间隙的底表面附近的顶表面附近以更快的速率发生，使得第一电介质氧化物层具有 从每个间隙的顶表面到底表面的锥形轮廓。 第二电介质氧化物层通过CFD沉积在第一电介质氧化物层上的一个或多个间隙中。

    Conformal film deposition for gapfill
    9.
    发明授权
    Conformal film deposition for gapfill 有权
    用于间隙填充的保形膜沉积

    公开(公告)号：US09355886B2

    公开(公告)日：2016-05-31

    申请号：US14074596

    申请日：2013-11-07

    Applicant: Novellus Systems, Inc.

    Inventor： Shankar Swaminathan ,  Bart van Schravendijk ,  Adrien LaVoie ,  Sesha Varadarajan ,  Jason Daejin Park ,  Michal Danek ,  Naohiro Shoda

    IPC: H01L21/311 ,  H01L21/762 ,  H01L21/67 ,  H01L21/02 ,  C23C16/04 ,  C23C16/455 ,  C23C16/56

    CPC classification number: H01L21/76224 ,  C23C16/045 ,  C23C16/45523 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/67017

    Abstract: A method and apparatus for conformally depositing a dielectric oxide in high aspect ratio gaps in a substrate is disclosed. A substrate is provided with one or more gaps into a reaction chamber where each gap has a depth to width aspect ratio of greater than about 5:1. A first dielectric oxide layer is deposited in the one or more gaps by CFD. A portion of the first dielectric oxide layer is etched using a plasma etch, where etching the portion of the first dielectric oxide layer occurs at a faster rate near a top surface than near a bottom surface of each gap so that the first dielectric oxide layer has a tapered profile from the top surface to the bottom surface of each gap. A second dielectric oxide layer is deposited in the one or more gaps over the first dielectric oxide layer via CFD.

    Abstract translation: 公开了一种用于在衬底中的高纵横比间隙中共形沉积介电氧化物的方法和装置。 衬底在反应室中具有一个或多个间隙，其中每个间隙具有大于约5:1的深宽比。 第一电介质氧化物层通过CFD沉积在一个或多个间隙中。 使用等离子体蚀刻蚀刻第一电介质氧化物层的一部分，其中蚀刻第一电介质氧化物层的部分以比在每个间隙的底表面附近的顶表面附近以更快的速率发生，使得第一电介质氧化物层具有 从每个间隙的顶表面到底表面的锥形轮廓。 第二电介质氧化物层通过CFD沉积在第一电介质氧化物层上的一个或多个间隙中。

    METHODS AND APPARATUS FOR DIELECTRIC DEPOSITION
    10.
    发明申请
    METHODS AND APPARATUS FOR DIELECTRIC DEPOSITION 审中-公开
    电介质沉积的方法和装置

    公开(公告)号：US20140302689A1

    公开(公告)日：2014-10-09

    申请号：US14249272

    申请日：2014-04-09

    Applicant: Novellus Systems, Inc.

    Inventor： Kaihan Ashtiani ,  Michael Wood ,  John Drewery ,  Naohiro Shoda ,  Bart van Schravendijk ,  Lakshminarayana Nittala ,  Nerissa Draeger

    IPC: H01L21/02

    CPC classification number: H01L21/02274 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02208 ,  H01L21/76224

    Abstract: Methods for depositing flowable dielectric films are provided. In some embodiments, the methods involve introducing a silicon-containing precursor to a deposition chamber wherein the precursor is characterized by having a partial pressure:vapor pressure ratio between 0.01 and 1. In some embodiments, the methods involve depositing a high density plasma dielectric film on a flowable dielectric film. The high density plasma dielectric film may fill a gap on a substrate. Also provided are apparatuses for performing the methods.

    Abstract translation: 提供了用于沉积可流动介电膜的方法。 在一些实施方案中，所述方法包括向沉积室引入含硅前体，其中所述前体的特征在于具有0.01至1的分压：蒸气压比。在一些实施方案中，所述方法包括沉积高密度等离子体电介质膜 在可流动的电介质膜上。 高密度等离子体电介质膜可以填充衬底上的间隙。 还提供了用于执行方法的装置。

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