公开(公告)号：US10475646B2

公开(公告)日：2019-11-12

申请号：US15887069

申请日：2018-02-02

Applicant: OCI Company Ltd.

Inventor： Chang Ryol Kim ,  A Youn Cho ,  Ja Cheol Koo ,  Yong Chul Shin

IPC: B01D53/86 ,  G05B21/00 ,  C01B33/039 ,  B01J8/18 ,  C01B33/021 ,  C01B33/107 ,  H01L21/02 ,  C01B33/03 ,  C23C16/24 ,  C23C16/44 ,  C23C16/448 ,  C23C16/455

Abstract: The present invention relates to a process for producing of polycrystalline silicon, and the method includes (1) preparing a silicon-containing gas; (2) storing the silicon-containing gas in a storage tank; (3) depositing polycrystalline silicon by injecting the silicon-containing gas stored in the storage tank to a CVD reactor; (4) treating an off-gas emitted in the depositing step; and (5) injecting the gas treated in the treating step to the storage tank.

公开(公告)号：US20180226249A1

公开(公告)日：2018-08-09

申请号：US15887069

申请日：2018-02-02

Applicant: OCI Company Ltd.

Inventor： Chang Ryol Kim ,  A Youn Cho ,  Ja Cheol Koo ,  Yong Chul Shin

IPC: H01L21/02

Abstract: The present invention relates to a process for producing of polycrystalline silicon, and the method includes (1) preparing a silicon-containing gas; (2) storing the silicon-containing gas in a storage tank; (3) depositing polycrystalline silicon by injecting the silicon-containing gas stored in the storage tank to a CVD reactor; (4) treating an off-gas emitted in the depositing step; and (5) injecting the gas treated in the treating step to the storage tank.