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公开(公告)号:US12032205B2
公开(公告)日:2024-07-09
申请号:US18469710
申请日:2023-09-19
发明人: Brian Mattis , Taran Huffman , Bryan Woo , Thien-An Nguyen
CPC分类号: G02B6/136 , G02B2006/12061 , G02B2006/12097 , G02B2006/12169 , G02B2006/12188 , G02B2006/12197
摘要: A method of co-manufacturing silicon waveguides, SiN waveguides, and semiconductor structures in a photonic integrated circuit. A silicon waveguide structure can be formed using a suitable process, after which it is buried in a cladding. The cladding is polished, and a silicon nitride layer is disposed to define a silicon nitride waveguide. The silicon nitride waveguide is buried in a cladding, and annealed. Thereafter, cladding above the silicon waveguide structure can be trenched through, and low-temperature operations can be performed to or with an exposed surface of the silicon waveguide structure.