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    INTERFEROMETRIC INTEGRATED OPTICAL GYROSCOPES
    4.
    发明公开
    INTERFEROMETRIC INTEGRATED OPTICAL GYROSCOPES 审中-公开

    公开(公告)号：US20230258863A1

    公开(公告)日：2023-08-17

    申请号：US18110989

    申请日：2023-02-17

    Applicant: OSCPS MOTION SENSING INC.

    Inventor： Kazem ZANDI

    IPC: G02B6/122 ,  G01C19/64 ,  G02B6/136

    CPC classification number: G02B6/122 ,  G01C19/64 ,  G02B6/136 ,  G02B2006/12169

    Abstract: An optical waveguide structure for an optical gyroscope, the structure including a substrate; at least a first silicon nitride waveguide loop and a second silicon nitride waveguide loop connected to the substrate, the first silicon nitride waveguide loop and the second silicon nitride waveguide being disposed at different vertical distances from the substrate; at least one vertical coupler optically coupling the first silicon nitride waveguide loop to the second silicon nitride waveguide; and a plurality of air cavities defined in material below the first and second silicon nitride waveguide loops, no air cavities being defined in regions immediately below a coupling region defined around the at least one vertical coupler.

    Integrated Semiconductor Optical Coupler
    6.
    发明申请
    Integrated Semiconductor Optical Coupler 有权
    集成半导体光耦合器

    公开(公告)号：US20160170139A1

    公开(公告)日：2016-06-16

    申请号：US14971466

    申请日：2015-12-16

    Applicant: IMEC VZW

    Inventor： Philippe Absil ,  Shankar Kumar Selvaraja

    IPC: G02B6/12 ,  G02B6/132

    CPC classification number: G02B6/12 ,  G02B6/13 ,  G02B6/132 ,  G02B6/136 ,  G02B2006/12038 ,  G02B2006/12061 ,  G02B2006/12169

    Abstract: A method for fabricating an integrated semiconductor photonics device is disclosed. The method may include providing a first substrate having on its top surface a monocrystalline semiconductor layer suitable for supporting an optical mode and forming a homogenous and conformal first dielectric layer on a planar surface of the monocrystalline semiconductor layer. The method may further include providing a dielectric waveguide core on the first dielectric layer, the dielectric waveguide core optically coupled to a first region of the monocrystalline semiconductor layer through the first dielectric layer. The method may further include depositing a second dielectric layer on the dielectric waveguide core, thereby covering the dielectric waveguide core, and annealing the substrate to drive hydrogen out of the dielectric waveguide core.

    Abstract translation: 公开了一种用于制造集成半导体光子学器件的方法。 该方法可以包括提供第一衬底，其在其顶表面上具有适于支撑光学模式的单晶半导体层，并在单晶半导体层的平坦表面上形成均匀且适形的第一介电层。 该方法可以进一步包括在第一电介质层上提供电介质波导芯，电介质波导芯通过第一介电层光耦合到单晶半导体层的第一区域。 该方法还可以包括在电介质波导芯上沉积第二电介质层，从而覆盖电介质波导芯，并退火衬底以将氢驱出电介质波导芯。

    METHOD OF FORMING PHOTONICS STRUCTURES
    7.
    发明申请
    METHOD OF FORMING PHOTONICS STRUCTURES 审中-公开
    形成光子结构的方法

    公开(公告)号：US20150198775A1

    公开(公告)日：2015-07-16

    申请号：US13600779

    申请日：2012-08-31

    Applicant: Gurtej Sandhu

    Inventor： Gurtej Sandhu

    IPC: G02B6/42 ,  H01L31/18 ,  G02B6/122 ,  H01L31/0232

    CPC classification number: G02B6/42 ,  G02B6/122 ,  G02B2006/12169 ,  H01L21/324 ,  H01L27/0617 ,  H01L31/02327 ,  H01L31/1864

    Abstract: The disclosed embodiments relate to an integrated circuit structure and methods of forming them in which photonic devices are formed on the back end of fabricating a CMOS semiconductor structure containing electronic devices. Doped regions associated with the photonic devices are formed using microwave annealing for dopant activation.

    Abstract translation: 所公开的实施例涉及集成电路结构及其形成方法，其中光子器件形成在制造包含电子器件的CMOS半导体结构的后端。 与光子器件相关联的掺杂区域使用微波退火形成掺杂剂激活。

    Silicon Photonic Fiber and Method of Manufacture
    8.
    发明申请
    Silicon Photonic Fiber and Method of Manufacture 有权
    硅光子纤维及其制造方法

    公开(公告)号：US20140328741A1

    公开(公告)日：2014-11-06

    申请号：US14333843

    申请日：2014-07-17

    Applicant: Guifang Li ,  Fatih Yaman

    Inventor： Guifang Li ,  Fatih Yaman

    IPC: C01B33/023 ,  G02B6/10

    CPC classification number: C01B33/023 ,  G02B6/02328 ,  G02B6/02361 ,  G02B6/102 ,  G02B2006/12061 ,  G02B2006/12169

    Abstract: Methods of converting silica to silicon and fabricating silicon photonic crystal fiber (PCF) are disclosed. Silicon photonic crystal fibers made by the fabrication methods are also disclosed. One fabrication method includes: sealing silica PCF and a quantity of magnesium within a container, the quantity of magnesium defined by 2Mg(g)+SiO2(s)->2MgO(s)+Si(s); converting silica PCF to a reacted PCF through magnesiothermic reduction; and converting the reacted PCF to the fabricated silicon PCF by selective dissolution of the reacted PCF in an acid. Another fabrication method includes: adding silica PCF and a quantity of solid magnesium to an unsealed container, the quantity of magnesium substantially in excess of that defined by 2Mg(g)+SiO2(s)->2MgO(s)+Si(s); converting silica PCF to a reacted PCF through magnesiothermic reduction; and converting the reacted PCF to the fabricated silicon PCF by selective dissolution of the reacted PCF in an acid.

    Abstract translation: 公开了将二氧化硅转化为硅并制造硅光子晶体光纤（PCF）的方法。 还公开了通过制造方法制造的硅光子晶体光纤。 一种制造方法包括：将二氧化硅PCF和一定量的镁密封在容器内，由2Mg（g）+ SiO 2（s）〜> 2MgO（s）+ Si（s）限定的镁的量; 通过氧化镁还原将二氧化硅PCF转化为反应的PCF; 并通过将反应的PCF选择性溶解在酸中将反应的PCF转化成制造的硅PCF。 另一种制造方法包括：将二氧化硅PCF和一定量的固体镁添加到未密封的容器中，镁的量基本上超过由2Mg（g）+ SiO 2（s）>> 2MgO（s）+ Si ; 通过氧化镁还原将二氧化硅PCF转化为反应的PCF; 并通过将反应的PCF选择性溶解在酸中将反应的PCF转化成制造的硅PCF。

    Microphotonic waveguide including core/cladding interface layer
    10.
    发明申请
    Microphotonic waveguide including core/cladding interface layer 有权
    微波导管包括芯/包层界面层

    公开(公告)号：US20080253728A1

    公开(公告)日：2008-10-16

    申请号：US11899234

    申请日：2007-09-05

    Applicant: Daniel K. Sparacin ,  Anuradha M. Agarwal ,  Pradip K. Roy ,  Lionel C. Kimerling

    Inventor： Daniel K. Sparacin ,  Anuradha M. Agarwal ,  Pradip K. Roy ,  Lionel C. Kimerling

    IPC: G02B6/10 ,  C03B37/022

    CPC classification number: G02B6/132 ,  G02B6/122 ,  G02B6/1223 ,  G02B2006/12097 ,  G02B2006/121 ,  G02B2006/12169 ,  G02B2006/12176

    Abstract: The invention provides a waveguide with a waveguide core having longitudinal sidewall surfaces, a longitudinal top surface, and a longitudinal bottom surface that is disposed on a substrate. An interface layer is disposed on at least one longitudinal sidewall surface of the waveguide core. A waveguide cladding layer is disposed on at least the waveguide core sidewall and top surfaces, over the interface layer. The waveguide of the invention can be produced by forming a waveguide undercladding layer on a substrate, and then forming a waveguide core on the undercladding layer. An interface layer is then formed on at least a longitudinal sidewall surface of the waveguide core, and an upper cladding layer is formed on a longitudinal top surface and on longitudinal sidewall surfaces of the waveguide core, over the interface layer.

    Abstract translation: 本发明提供一种具有波导芯的波导，波导芯具有纵向侧壁表面，纵向顶表面和设置在基底上的纵向底表面。 界面层设置在波导芯的至少一个纵向侧壁表面上。 至少在波导芯侧壁和顶表面上，在界面层上设置波导覆层。 本发明的波导可以通过在基板上形成波导管下封层，然后在下封层上形成波导芯来制造。 然后在波导芯的至少纵向侧壁表面上形成界面层，并且在该界面层上的纵向顶表面和波导芯的纵向侧壁表面上形成上覆层。

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