公开(公告)号：US11869976B2

公开(公告)日：2024-01-09

申请号：US17289200

申请日：2020-08-25

申请人： ORDOS YUANSHENG OPTOELECTRONICS CO., LTD. ,  BOE TECHNOLOGY GROUP CO., LTD.

发明人： Lei Yan ,  Jun Fan ,  Yezhou Fang ,  Feng Li ,  Wei Li ,  Lei Li ,  Yusheng Liu ,  Yanyan Meng

IPC分类号： H01L29/786 ,  H01L27/12 ,  H01L29/417 ,  H01L29/66

CPC分类号： H01L29/78645 ,  H01L27/1222 ,  H01L29/41733 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675 ,  H01L29/78696

摘要： A thin film transistor and a manufacturing method therefor, an array substrate, and a display device. The thin film transistor includes an active layer, a gate insulating layer, and a gate electrode; the gate insulating layer is located on one side of the active layer; the gate electrode is located on one side of the gate insulating layer distant from the active layer; the gate electrode includes an opening a part of the active layer overlapped with the opening includes a first lightly doped region, a first heavily doped region, and a second lightly doped region that are sequentially arranged along a first direction parallel to a plane where the active layer is located.

公开(公告)号：US11121226B2

公开(公告)日：2021-09-14

申请号：US16632179

申请日：2019-01-29

申请人： ORDOS YUANSHENG OPTOELECTRONICS CO., LTD. ,  BOE TECHNOLOGY GROUP CO., LTD.

发明人： Lei Yan ,  Feng Li ,  Yezhou Fang ,  Jun Fan ,  Lei Li ,  Yanyan Meng ,  Lei Yao ,  Jinjin Xue ,  Chenglong Wang ,  Jinfeng Wang ,  Lin Hou ,  Zhixuan Guo

IPC分类号： H01L29/417 ,  H01L29/66 ,  H01L29/786 ,  G02F1/1343 ,  G02F1/1362 ,  H01L27/12 ,  H01L27/32

摘要： The present disclosure provides a thin film transistor and a method for manufacturing the same, an array substrate, and a display device. The thin film transistor includes: an active layer located on one side of the substrate; a first interlayer dielectric layer located on one side of the active layer away from the substrate; a source penetrating through the first interlayer dielectric layer, and connected to the active layer; a second interlayer dielectric layer located on one side of the first interlayer dielectric layer away from the active layer and covering the source; and a drain, wherein the drain comprises a first portion penetrating through the second interlayer dielectric layer and the first interlayer dielectric layer and connected to the active layer.