公开(公告)号：US20220230988A1

公开(公告)日：2022-07-21

申请号：US17595826

申请日：2020-05-28

Applicant: OSAKA UNIVERSITY

Inventor： Katsuaki SUGANUMA ,  Chuantong CHEN ,  Zheng ZHANG

IPC: H01L23/00

Abstract: A bonding structure production method for producing a bonding structure (100) includes at least bonding a semiconductor element (30) and a substrate (10) using a silver paste. The substrate (10) includes a die attachment portion (12) to which the semiconductor element (30) is to be bonded. The die attachment portion (12) includes an alumina layer (16) serving as a surface layer on a bonding side of the die attachment portion (12) to which the semiconductor element (30) is to be bonded. The silver paste contains a solvent and silver particles with a residual strain measured by X-ray diffractometry of at least 5.0%. Preferably, the silver particles have a volume-based 50% cumulative diameter of at least 100 nm and no greater than 50 μm.