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    BONDING DEVICE
    1.
    发明申请
    BONDING DEVICE 审中-公开

    公开(公告)号：US20190189587A1

    公开(公告)日：2019-06-20

    申请号：US16324528

    申请日：2017-06-16

    Applicant: OSAKA UNIVERSITY

    Inventor： Katsuaki SUGANUMA ,  Shijo NAGAO ,  Akio SHIMOYAMA ,  Shinya SEKI

    IPC: H01L23/00 ,  B23K1/00

    CPC classification number: H01L24/75 ,  B23K1/0008 ,  B23K2101/40 ,  H01L21/52 ,  H01L2224/75304 ,  H01L2224/7555 ,  H01L2224/75822 ,  H01L2224/7598

    Abstract: A bonding device (100) bonds at least one component (C) to a substrate (B) using a metal material (M). The bonding device (100) includes a wall section (20), at least one pressing section (40), and a rotational shaft (30). The rotational shaft (30) is fixed to the wall section (20). Each pressing section (40) has an arm (42) and a presser (43) or a substrate supporting member (90). The arm (42) extends from the rotational shaft (30). The arm (42) pivots about the rotational shaft (30). The presser (43) presses the component (C). The substrate supporting member (90) is disposed on a reference surface (142). The substrate supporting member (90) supports the substrate (B). The component (C) is bonded to the substrate (B) through point contact of the presser (43) with the component (C) or point contact of the substrate supporting member (90) with the reference surface (142).

    BONDING STRUCTURE PRODUCTION METHOD AND BONDING STRUCTURE
    7.
    发明申请
    BONDING STRUCTURE PRODUCTION METHOD AND BONDING STRUCTURE 有权

    公开(公告)号：US20220230988A1

    公开(公告)日：2022-07-21

    申请号：US17595826

    申请日：2020-05-28

    Applicant: OSAKA UNIVERSITY

    Inventor： Katsuaki SUGANUMA ,  Chuantong CHEN ,  Zheng ZHANG

    IPC: H01L23/00

    Abstract: A bonding structure production method for producing a bonding structure (100) includes at least bonding a semiconductor element (30) and a substrate (10) using a silver paste. The substrate (10) includes a die attachment portion (12) to which the semiconductor element (30) is to be bonded. The die attachment portion (12) includes an alumina layer (16) serving as a surface layer on a bonding side of the die attachment portion (12) to which the semiconductor element (30) is to be bonded. The silver paste contains a solvent and silver particles with a residual strain measured by X-ray diffractometry of at least 5.0%. Preferably, the silver particles have a volume-based 50% cumulative diameter of at least 100 nm and no greater than 50 μm.

    SILVER PARTICLE PRODUCING METHOD, SILVER PARTICLES, AND SILVER PASTE
    9.
    发明申请
    SILVER PARTICLE PRODUCING METHOD, SILVER PARTICLES, AND SILVER PASTE 审中-公开

    公开(公告)号：US20200086391A1

    公开(公告)日：2020-03-19

    申请号：US15746902

    申请日：2016-07-22

    Applicant: OSAKA UNIVERSITY

    Inventor： Katsuaki SUGANUMA ,  Jinting JIU

    IPC: B22F9/24 ,  B22F1/00 ,  C09J1/00 ,  C09J9/02 ,  H01B1/22

    Abstract: First, a liquid mixture is obtained by mixing at least a silver compound, a reductant, and a dispersant (S1). Then, the liquid mixture is heated to cause reaction between the silver compound and the reductant and generate first silver particles each having a sheet-like or plate-like shape and second silver particles each having a spherical shape or a shape closer to a sphere than the first silver particles and a particle diameter smaller than a maximum value of a length of a side of each of the first silver particles (S2).

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