SILICON NITRIDE SINTERED BODY AND HIGH-TEMPERATURE-RESISTANT MEMBER USING THE SAME

    公开(公告)号:US20180134626A1

    公开(公告)日:2018-05-17

    申请号:US15564320

    申请日:2016-03-28

    Abstract: The present invention provides a silicon nitride sintered body including silicon nitride crystal grains and a grain boundary phase, wherein the silicon nitride crystal grains are covered with the grain boundary phase and width of the grain boundary phase is 0.2 nm or more. It is preferable that the width of the grain boundary phase is 0.2 nm to 5 nm. Additionally, it is preferable that the silicon nitride sintered body includes 15% by mass or less of the grain boundary phase. According to the above-described configuration, it is possible to provide a high-temperature-resistant silicon nitride sintered body in which degradation of the grain boundary phase under high temperature environment is suppressed. This silicon nitride sintered body is suitable for constituent material of a high-temperature-resistant member, use environment of which is 300° C. or higher.

Patent Agency Ranking