公开(公告)号：US11374152B2

公开(公告)日：2022-06-28

申请号：US17054488

申请日：2019-05-03

Applicant: OSRAM OLED GmbH

Inventor： Stefan Heckelmann ,  Andreas Rudolph ,  Alexander Tonkikh

IPC: H01L33/22 ,  H01L33/30 ,  H01L33/46 ,  H01L33/38

Abstract: Provided is an optoelectronic semiconductor chip including a semiconductor layer sequence in which an active zone for generating radiation is located between a first semiconductor region and a second semiconductor region. A first electrical contact of the semiconductor layer sequence is applied to the first semiconductor region. A second electrical contact is applied to the second semiconductor region. The second electrical contact is located in a trench of the second semiconductor region. The trench is restricted to the second semiconductor region and ends at a distance from the active zone. A distance between a bottom of the trench and the active zone is at most 3 μm.

公开(公告)号：US20210167251A1

公开(公告)日：2021-06-03

申请号：US17054488

申请日：2019-05-03

Applicant: OSRAM OLED GmbH

Inventor： Stefan Heckelmann ,  Andreas Rudolph ,  Alexander Tonkikh

IPC: H01L33/38 ,  H01L33/22 ,  H01L33/30 ,  H01L33/46

Abstract: Provided is an optoelectronic semiconductor chip including a semiconductor layer sequence in which an active zone for generating radiation is located between a first semiconductor region and a second semiconductor region. A first electrical contact of the semiconductor layer sequence is applied to the first semiconductor region. A second electrical contact is applied to the second semiconductor region. The second electrical contact is located in a trench of the second semiconductor region. The trench is restricted to the second semiconductor region and ends at a distance from the active zone. A distance between a bottom of the trench and the active zone is at most 3 μm.