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公开(公告)号：US11374152B2
公开(公告)日：2022-06-28
申请号：US17054488
申请日：2019-05-03
Applicant: OSRAM OLED GmbH
Inventor： Stefan Heckelmann , Andreas Rudolph , Alexander Tonkikh
Abstract: Provided is an optoelectronic semiconductor chip including a semiconductor layer sequence in which an active zone for generating radiation is located between a first semiconductor region and a second semiconductor region. A first electrical contact of the semiconductor layer sequence is applied to the first semiconductor region. A second electrical contact is applied to the second semiconductor region. The second electrical contact is located in a trench of the second semiconductor region. The trench is restricted to the second semiconductor region and ends at a distance from the active zone. A distance between a bottom of the trench and the active zone is at most 3 μm.
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Patent Agency Ranking
2.发明申请公开(公告)号：US20200168764A1
公开(公告)日：2020-05-28
申请号：US16624312
申请日：2018-05-17
Applicant: OSRAM OLED GmbH
Inventor： Alexander Tonkikh
Abstract: A semiconductor chip may include a semiconductor body, a current spreading layer, and a contact structure. The semiconductor body may include a first semiconductor layer, a second semiconductor layer, and an intervening active layer, and a current spreading layer arranged in a vertical direction between the contact structure and the semiconductor body. The semiconductor boy has a plurality of internal step configured in a terrace-like manner where the contact structure may include a plurality of conductor tracks arranged with regard to the lateral orientations of the internal step in such a way that current spreading along the internal steps is promoted vis-à-vis current spreading transversely with respect to the internal steps. A method for producing the semiconductor chip is also included.
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公开(公告)号：US20210167251A1
公开(公告)日：2021-06-03
申请号：US17054488
申请日：2019-05-03
Applicant: OSRAM OLED GmbH
Inventor： Stefan Heckelmann , Andreas Rudolph , Alexander Tonkikh
Abstract: Provided is an optoelectronic semiconductor chip including a semiconductor layer sequence in which an active zone for generating radiation is located between a first semiconductor region and a second semiconductor region. A first electrical contact of the semiconductor layer sequence is applied to the first semiconductor region. A second electrical contact is applied to the second semiconductor region. The second electrical contact is located in a trench of the second semiconductor region. The trench is restricted to the second semiconductor region and ends at a distance from the active zone. A distance between a bottom of the trench and the active zone is at most 3 μm.
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公开(公告)号：US11495939B2
公开(公告)日：2022-11-08
申请号：US16977888
申请日：2019-03-05
Applicant: OSRAM OLED GmbH
Inventor： Bruno Jentzsch , Alvaro Gomez-Iglesias , Alexander Tonkikh , Stefan Illek
Abstract: A semiconductor laser is provided that includes a semiconductor layer sequence and electrical contact surfaces. The semiconductor layer sequence includes a waveguide with an active zone. Furthermore, the semiconductor layer sequence includes a first and a second cladding layer, between which the waveguide is located. At least one oblique facet is formed on the semiconductor layer sequence, which has an angle of 45° to a resonator axis with a tolerance of at most 10°. This facet forms a reflection surface towards the first cladding layer for laser radiation generated during operation. A maximum thickness of the first cladding layer is between 0.5 M/n and 10 M/n at least in a radiation passage region, wherein n is the average refractive index of the first cladding layer and M is the vacuum wavelength of maximum intensity of the laser radiation.
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5.发明授权公开(公告)号：US11031526B2
公开(公告)日：2021-06-08
申请号：US16624312
申请日：2018-05-17
Applicant: OSRAM OLED GmbH
Inventor： Alexander Tonkikh
Abstract: A semiconductor chip may include a semiconductor body, a current spreading layer, and a contact structure. The semiconductor body may include a first semiconductor layer, a second semiconductor layer, and an intervening active layer, and a current spreading layer arranged in a vertical direction between the contact structure and the semiconductor body. The semiconductor boy has a plurality of internal step configured in a terrace-like manner where the contact structure may include a plurality of conductor tracks arranged with regard to the lateral orientations of the internal step in such a way that current spreading along the internal steps is promoted vis-à-vis current spreading transversely with respect to the internal steps. A method for producing the semiconductor chip is also included.
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公开(公告)号：US20210006033A1
公开(公告)日：2021-01-07
申请号：US16977888
申请日：2019-03-05
Applicant: OSRAM OLED GmbH
Inventor： Bruno Jentzsch , Alvaro Gomez-Iglesias , Alexander Tonkikh , Stefan Illek
Abstract: A semiconductor laser is provided that includes a semiconductor layer sequence and electrical contact surfaces. The semiconductor layer sequence includes a waveguide with an active zone. Furthermore, the semiconductor layer sequence includes a first and a second cladding layer, between which the waveguide is located. At least one oblique facet is formed on the semiconductor layer sequence, which has an angle of 45° to a resonator axis with a tolerance of at most 10°. This facet forms a reflection surface towards the first cladding layer for laser radiation generated during operation. A maximum thickness of the first cladding layer is between 0.5 M/n and 10 M/n at least in a radiation passage region, wherein n is the average refractive index of the first cladding layer and M is the vacuum wavelength of maximum intensity of the laser radiation.
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