公开(公告)号：US11245246B2

公开(公告)日：2022-02-08

申请号：US16308985

申请日：2017-05-31

Applicant: OSRAM OLED GmbH

Inventor： Wolfgang Reill

IPC: H01S5/042 ,  H01S5/0237 ,  H01S5/065 ,  H01S5/023 ,  H01S5/0233 ,  H01S5/0234 ,  H01S5/0235 ,  H01S5/024

Abstract: A semiconductor laser diode includes a semiconductor body having an emitter region; and a first connection element that electrically contacts the semiconductor body in the emitter region, wherein the semiconductor body is in contact with the first connection element in the emitter region, and at least in places in the emitter region, the semiconductor body has a structuring that enlarges a contact area between the semiconductor body and the first connection element.

公开(公告)号：US20220140566A1

公开(公告)日：2022-05-05

申请号：US17573701

申请日：2022-01-12

Applicant: OSRAM OLED GmbH

Inventor： Wolfgang Reill

IPC: H01S5/0237 ,  H01S5/042 ,  H01S5/065 ,  H01S5/023 ,  H01S5/0233 ,  H01S5/0234 ,  H01S5/0235

Abstract: A semiconductor laser diode includes a semiconductor body having an emitter region; and a first connection element that electrically contacts the semiconductor body in the emitter region, wherein the semiconductor body is in contact with the first connection element in the emitter region, at least in places in the emitter region, the semiconductor body has a structuring that enlarges a contact area between the semiconductor body and the first connection element, the semiconductor body includes a connection region that directly adjoins the first connection element at the contact area, and the connection region is a highly p-doped layer.