公开(公告)号：US20220131033A1

公开(公告)日：2022-04-28

申请号：US17435321

申请日：2020-02-21

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Andreas Koller ,  Bernd Mayer

IPC: H01L33/12 ,  H01L21/02 ,  H01L33/30

Abstract: In an embodiment a growth structure for a radiation-emitting semiconductor component includes a semiconductor substrate containing a material based on arsenide compound semiconductors and a buffer structure arranged on the semiconductor substrate, wherein the buffer structure includes a buffer layer having at least one n-doped layer and wherein the n-doped layer contains oxygen, and a molar fraction of oxygen in the n-doped layer is between 1015 cm−3 and 1019 cm−3, inclusive.