公开(公告)号：US20220102941A1

公开(公告)日：2022-03-31

申请号：US17596642

申请日：2020-07-09

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Martin Hetzl ,  Petrus Sundgren ,  Jens Ebbecke ,  Uwe Strauß

IPC: H01S5/20 ,  H01S5/028 ,  H01S5/02 ,  H01S5/10 ,  H01S5/343

Abstract: In an embodiment, an edge-emitting semiconductor laser diode includes a growth substrate, a semiconductor layer sequence located on the growth substrate, the semiconductor layer sequence having an active layer and an etch stop layer and two facets located opposite each other, wherein the facets bound the semiconductor layer sequence in a lateral direction, wherein the semiconductor layer sequence includes two edge regions adjoining the facets and a central region directly adjoining both edge regions, wherein, within each of the edge regions, a volume fraction of the active layer in the semiconductor layer sequence is smaller than in the central region, wherein the active layer is spaced apart from one facet, wherein a distance of the active layer to the facet varies along a direction parallel to this facet, and wherein the etch stop layer is arranged between the growth substrate and the active layer.