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公开(公告)号:US20230223205A1
公开(公告)日:2023-07-13
申请号:US18011059
申请日:2021-06-17
发明人: Simon KIRNER , Laura MIRANDA PEREZ , Immo KOETSCHAU , Henry SNAITH , Edward CROSSLAND , Christopher CASE , Alan SHARP
CPC分类号: H01G9/2027 , H10K39/15 , H10K71/60 , H01G9/0029 , H01G9/2031 , H01G9/2059
摘要: A multi-junction photovoltaic device comprising a layer of metal oxynitride between a first sub-cell and a second sub-cell is disclosed, the first sub-cell having a layer comprising a perovskite light absorber material. In addition, a method of manufacturing said multi junction photovoltaic device is disclosed. The metal oxynitride is preferably titanium oxynitride. Advantageously, the device may be produced in a simple, fast, consistent and inexpensive manner, whilst the properties of the titanium oxynitride layer may be tuned to avoid the occurrence of local shunt paths and to reduce reflection losses.
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公开(公告)号:US20210395279A1
公开(公告)日:2021-12-23
申请号:US17279146
申请日:2019-09-23
摘要: The present invention provides a method of forming a crystalline or polycrystalline layer of an organic-inorganic metal halide perovskite material comprising a three-dimensional crystal structure represented by the formula AMX 3, in which A represents an organic cation or a mixture of two or more different cations, at least one of which is an organic cation, M represents a divalent metal cation or a mixture of two or more different divalent metal cations, and X represents halide anions which are the same or different, the method comprising the steps of: (i) forming a first layer on the surface of a substrate, the first layer comprising an organic-inorganic metal halide perovskite material having a planar, layered two-dimensional crystal structure (ii) reacting the first layer with one or more organic halides to form the crystalline or polycrystalline layer comprising an organic-inorganic metal halide perovskite material having the formula AMX 3. Also provided is an optoelectronic or photovoltaic device including an active layer comprising an organic-inorganic metal halide perovskite material comprising a three-dimensional crystal structure represented by the formula AMX 3, wherein the material is obtainable using the above defined method.
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