公开(公告)号：US20210383978A1

公开(公告)日：2021-12-09

申请号：US17339005

申请日：2021-06-04

Applicant: Okinawa Institute of Science and Technology School Corporation

Inventor： Yabing Qi ,  Longbin Qiu ,  Sisi He ,  Luis Katsuya Ono

IPC: H01G9/00 ,  H01G9/20 ,  H01L51/00 ,  H01L51/42 ,  C23C16/02 ,  C23C16/30 ,  C23C16/46

Abstract: Systems and methods for performing a rapid hybrid chemical vapor deposition are described herein. In an embodiment, first type of precursor materials is deposited on a substrate. The substrate is placed in a receptacle of a heating device, the heating device configured to provide heat to at least a portion of the receptacle. A second type of precursor materials is placed in the receptacle of the heating device such that the organic compound is closer to a gas source of the heating device than the substrate. A gas flow is created through the receptacle of the heating device. The heating component is used to cause of a portion of the receptacle comprising the substrate and the second type of precursor materials. During the heating process, at least a portion of the second type of precursor materials is deposited on at least a portion of the first type of precursor materials on the substrate.