公开(公告)号：US06818488B2

公开(公告)日：2004-11-16

申请号：US10332451

申请日：2003-09-08

申请人： Olivier Joubert ,  Giles Cunge ,  Johann Foucher ,  David Fuard ,  Marceline Bonvalot ,  Laurent Vallier

发明人： Olivier Joubert ,  Giles Cunge ,  Johann Foucher ,  David Fuard ,  Marceline Bonvalot ,  Laurent Vallier

IPC分类号： H01L21338

CPC分类号： H01L29/4958 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/28114 ,  H01L29/42376

摘要： The invention relates to a process for making a gate for a CMOS transistor structure, made from a stack realized on a face in a semi-conducting material of a substrate, said stack comprising a gate isolation layer, a gate material layer and a gate mask in sequence, the process comprising the following steps: a) anisotropic etching of the top part of the gate material layer not masked by the gate mask, this etching step leaving the bottom part of the gate material layer and leading to the formation of a deposit composed of etching products on the etching sides resulting from the anisotropic etching, b) treatment of the deposit composed of etching products, to make a protection layer reinforced against subsequent etching of the gate material, c) etching of the bottom part of the gate material layer as far as the gate isolation layer, this etching comprising isotropic etching of the gate material layer to make the gate shorter at the bottom than at the top.

摘要翻译： 本发明涉及一种用于制造CMOS晶体管结构的栅极的方法，该栅极由在衬底的半导体材料的表面上实现的叠层制成，所述堆叠包括栅极隔离层，栅极材料层和栅极掩模 顺序地，该方法包括以下步骤：a）不被栅极掩模掩蔽的栅极材料层的顶部的各向异性蚀刻，该蚀刻步骤离开栅极材料层的底部并导致形成沉积物 由各向异性腐蚀产生的蚀刻侧面上的蚀刻产物组成，b）处理由蚀刻产物构成的沉积物，以形成对栅极材料的后续蚀刻加强的保护层，c）蚀刻栅极材料的底部 层，直到栅极隔离层，该蚀刻包括栅极材料层的各向同性蚀刻，以使栅极在底部比在顶部更短。

公开(公告)号：US08443460B2

公开(公告)日：2013-05-14

申请号：US12906801

申请日：2010-10-18

申请人： Johann Foucher ,  Pascal Faurie

发明人： Johann Foucher ,  Pascal Faurie

IPC分类号： G01Q40/00 ,  G01Q40/02

CPC分类号： G01Q40/00 ,  G01Q40/02

摘要： A method for characterizing an atomic force microscopy tip using a characterization structure having two inclined sidewalls opposite one another and of which at least one actual lateral distance separating the two inclined sidewalls corresponding to a given height is known, the method including scanning the surfaces of the inclined sidewalls by the tip, the scanning being carried out while the tip oscillates solely vertically; measuring, for the given height, the lateral distance separating the two inclined sidewalls, the measurement incorporating the convolution of the shape of the tip with the shape of the characterization structure; and determining a characteristic dimension of the tip as a function of the measured lateral distance, and of the actual lateral distance.

摘要翻译： 使用具有两个彼此相对的倾斜侧壁的表征结构来表征原子力显微镜尖端的方法，其中分离与给定高度相对应的两个倾斜侧壁的至少一个实际横向距离是已知的，该方法包括扫描 倾斜的侧壁由尖端，当尖端完全垂直摆动时进行扫描; 测量给定的高度，分离两个倾斜的侧壁的横向距离，该测量结合尖端的形状与表征结构的形状的卷积; 以及根据所测量的横向距离和实际横向距离来确定尖端的特征尺寸。

公开(公告)号：US20090106868A1

公开(公告)日：2009-04-23

申请号：US12096953

申请日：2006-12-04

申请人： Johann Foucher ,  Stefan Landis

发明人： Johann Foucher ,  Stefan Landis

IPC分类号： G01N13/16

CPC分类号： G01Q40/02

摘要： The invention relates to an atomic force microscope tip characterization tool. An atomic force microscope uses a very fine exploration tip placed at the end of an elastic cantilever beam and an optical system for exploring movements of the beam in contact with a relief to be explored. The shape of the exploration tip must be known, and to this end a tool is used, placed in an atomic force microscope, the known shapes whereof are used to derive the shape of the tip. The tool of the invention includes a thin silicon beam (50) placed between two separated studs, formed on a support plate. The tip to be measured is moved between the studs remaining in contact with the beam and the measurement of the position of the tip during these movements enables the shape of the tip to be derived. The very small thickness (less than 5 nm) of the beam allows great accuracy and great reproducibility of measurement.

摘要翻译： 本发明涉及一种原子力显微镜尖端表征工具。 原子力显微镜使用放置在弹性悬臂梁末端的非常精细的探测尖端和用于探测与要被探查的浮雕接触的梁的运动的光学系统。 勘探尖端的形状必须是已知的，并且为此，使用放置在原子力显微镜中的工具，其已知形状用于导出尖端的形状。 本发明的工具包括一个置于支撑板上形成的两个分离柱之间的薄硅梁（50）。 要测量的尖端在与梁接触的螺柱之间移动，并且在这些运动期间测量尖端的位置使得能够导出尖端的形状。 光束的非常小的厚度（小于5nm）允许测量的精度和重复性很高。