公开(公告)号：US11543498B2

公开(公告)日：2023-01-03

申请号：US16522493

申请日：2019-07-25

Applicant: OmniVision Technologies, Inc.

Inventor： Woon II Choi ,  Sohei Manabe

IPC: G01S7/4865 ,  H01L27/146 ,  H01L27/148 ,  G01S17/89

Abstract: A pixel circuit includes a photodiode in semiconductor material to accumulate image charge in response to incident light. A tri-gate charge transfer block coupled includes a single shared channel region the semiconductor material. A transfer gate, shutter gate, and switch gate are disposed proximate to the single shared channel region. The transfer gate transfers image charge accumulated in the photodiode to the single shared channel region in response to a transfer signal. The shutter gate transfers the image charge in the single shared channel region to a floating diffusion in the semiconductor material in response to a shutter signal. The switch gate is configured to couple the single shared channel region to a charge storage structure in the semiconductor material in response to a switch signal.