Abstract:
In an embodiment, an image sensor comprises a pixel array having a minimal repeating unit, where the minimal repeating unit consists of 4×4 pixels including 12 green pixels, 2 blue pixels, and 2 red pixels, where a minimal repeating unit is immediately next to another minimal repeating unit in row and column directions. In another embodiment, an image sensor comprises a pixel array having a minimal repeating unit, where the minimal repeating unit consists of 8×8 pixels including 48 green pixels, 8 blue pixels, and 8 red pixels.
Abstract:
Quad photodiode microlens arrangements, and associated systems and methods. In one embodiment, a plurality of pixels are arranged in rows and columns of a pixel array disposed in a semiconductor material. The plurality of pixels includes green (G) pixels, red (R) pixels, blue (B) pixels and clear (C) pixels. Each pixel comprises a plurality of photodiodes that are configured to receive incoming light through an illuminated surface of the semiconductor material. A plurality of small microlenses are distributed over individual photodiodes of clear (C) pixels. A plurality of large microlenses are distributed over individual green (G) pixels. A diameter of the small microlenses is smaller than a diameter of the large microlenses.
Abstract:
An image sensor includes a plurality of photodiodes, a plurality of color filters, and a plurality of microlenses. The plurality of photodiodes are arranged as a photodiode array, each of the plurality of photodiodes disposed within respective portions of a semiconductor material with a first lateral area. The plurality of color filters are arranged as a color filter array optically aligned with the photodiode array. Each of the plurality of color filters having a second lateral area greater than the first lateral area. The plurality of microlenses are arranged as a microlens array optically aligned with the color filter array and the photodiode array. Each of the plurality of microlenses have a third later area greater than the first lateral area and less than the second lateral area.
Abstract:
An image sensor pixel includes a plurality of photodiodes, a shared microlens, and a plurality of microlenses. The plurality of photodiodes are arranged as a photodiode array with each of the plurality of photodiodes disposed within a semiconductor material. The shared microlens is optically aligned with a group of neighboring photodiodes included in the plurality of photodiodes. Each of the plurality of microlenses are optically aligned with an individual one of the plurality of photodiodes other than the group of neighboring photodiodes. The plurality of microlenses laterally surrounds the shared microlens.
Abstract:
An imaging system with on-chip phase-detection includes an image sensor with symmetric multi-pixel phase-difference detectors. Each symmetric multi-pixel phase-difference detector includes (a) a plurality of pixels forming an array and each having a respective color filter thereon, each color filter having a transmission spectrum and (b) a microlens at least partially above each of the plurality of pixels and having an optical axis intersecting the array. The array, by virtue of each transmission spectrum, has reflection symmetry with respect to both (a) a first plane that includes the optical axis and (b) a second plane that is orthogonal to the first plane. The imaging system includes a phase-detection row pair, which includes a plurality of symmetric multi-pixel phase-difference detectors in a pair of adjacent pixel rows and a pair, and an analogous phase-detection column pair.
Abstract:
An image sensor pixel includes a plurality of photodiodes, a shared microlens, and a plurality of microlenses. The plurality of photodiodes are arranged as a photodiode array with each of the plurality of photodiodes disposed within a semiconductor material. The shared microlens is optically aligned with a group of neighboring photodiodes included in the plurality of photodiodes. Each of the plurality of microlenses are optically aligned with an individual one of the plurality of photodiodes other than the group of neighboring photodiodes. The plurality of microlenses laterally surrounds the shared microlens.
Abstract:
An image sensor includes a plurality of photodiodes, a plurality of color filters, and a plurality of microlenses. The plurality of photodiodes are arranged as a photodiode array, each of the plurality of photodiodes disposed within respective portions of a semiconductor material with a first lateral area. The plurality of color filters are arranged as a color filter array optically aligned with the photodiode array. Each of the plurality of color filters having a second lateral area greater than the first lateral area. The plurality of microlenses are arranged as a microlens array optically aligned with the color filter array and the photodiode array. Each of the plurality of microlenses have a third later area greater than the first lateral area and less than the second lateral area.
Abstract:
Half Quad Photodiode (QPD) for improving QPD channel imbalance. In one embodiment, an image sensor includes a plurality of pixels arranged in rows and columns of a pixel array that is disposed in a semiconductor material. Each pixel includes a plurality of subpixels. Each subpixel comprises a plurality of first photodiodes, a plurality of second photodiodes and a plurality of third photodiodes. The plurality of pixels are configured to receive incoming light through an illuminated surface of the semiconductor material. A plurality of small microlenses are individually distributed over individual first photodiodes and individual second photodiodes of each subpixel. A plurality of large microlenses are each distributed over a plurality of third photodiodes of each subpixel. A diameter of the small microlenses is smaller than a diameter of the large microlenses.
Abstract:
Image sensors for Phase-Detection Auto Focus (PDAF) are provided. An image sensor includes a pixel including a plurality of photodiodes disposed in a semiconductor material according to an arrangement. The arrangement defines a first image subpixel comprising a plurality of first photodiodes, a second image subpixel comprising a plurality of second photodiodes, and a third image subpixel including a plurality of third photodiodes, and a phase detection subpixel comprising a first photodiode, a second photodiode, or a third photodiodes. The pixel can include a plurality of first micro-lenses disposed individually overlying at least a subset of the plurality of photodiodes of the first, second and third image subpixels. The pixel can also include a second micro-lens disposed overlying the phase detection subpixel, a first micro-lens of the first micro-lenses having a first radius less than a second radius of the second micro-lens.
Abstract:
An imaging system with on-chip phase-detection includes an image sensor with symmetric multi-pixel phase-difference detectors. Each symmetric multi-pixel phase-difference detector includes (a) a plurality of pixels forming an array and each having a respective color filter thereon, each color filter having a transmission spectrum and (b) a microlens at least partially above each of the plurality of pixels and having an optical axis intersecting the array. The array, by virtue of each transmission spectrum, has reflection symmetry with respect to both (a) a first plane that includes the optical axis and (b) a second plane that is orthogonal to the first plane. The imaging system includes a phase-detection row pair, which includes a plurality of symmetric multi-pixel phase-difference detectors in a pair of adjacent pixel rows and a pair, and an analogous phase-detection column pair.