公开(公告)号：US09305949B2

公开(公告)日：2016-04-05

申请号：US14070286

申请日：2013-11-01

Applicant: OmniVision Technologies, Inc.

Inventor： Gang Chen ,  Duli Mao ,  Dajiang Yang ,  Zhibin Xiong ,  Dyson H. Tai

IPC: H01L27/148 ,  H01L27/146

CPC classification number: H01L27/14614 ,  H01L27/14621 ,  H01L27/14641 ,  H01L27/14645

Abstract: An image sensor pixel for use in a high dynamic range image sensor includes a first photodiode, a plurality of photodiodes, a shared floating diffusion region, a first transfer gate, and a second transfer gate. The first photodiode is disposed in a semiconductor material. The first photodiode has a first light exposure area and a first doping concentration. The plurality of photodiodes is also disposed in the semiconductor material. Each photodiode in the plurality of photodiodes has the first light exposure area and the first doping concentration. The first transfer gate is coupled to transfer first image charge from the first photodiode to the shared floating diffusion region. The second transfer gate is coupled to transfer distributed image charge from each photodiode in the plurality of photodiodes to the shared floating diffusion region.

Abstract translation: 用于高动态范围图像传感器的图像传感器像素包括第一光电二极管，多个光电二极管，共享浮动扩散区，第一传输门和第二传输门。 第一光电二极管设置在半导体材料中。 第一光电二极管具有第一曝光区域和第一掺杂浓度。 多个光电二极管也设置在半导体材料中。 多个光电二极管中的每个光电二极管具有第一曝光区域和第一掺杂浓度。 第一传输栅极被耦合以将第一图像电荷从第一光电二极管传递到共享浮动扩散区域。 第二传输门被耦合以将分布图像电荷从多个光电二极管中的每个光电二极管传递到共享浮动扩散区域。

公开(公告)号：US20150123172A1

公开(公告)日：2015-05-07

申请号：US14070286

申请日：2013-11-01

Applicant: OmniVision Technologies, Inc.

Inventor： Gang Chen ,  Duli Mao ,  Dajiang Yang ,  Zhibin Xiong ,  Dyson H. Tai

IPC: H01L27/148

CPC classification number: H01L27/14614 ,  H01L27/14621 ,  H01L27/14641 ,  H01L27/14645

Abstract: An image sensor pixel for use in a high dynamic range image sensor includes a first photodiode, a plurality of photodiodes, a shared floating diffusion region, a first transfer gate, and a second transfer gate. The first photodiode is disposed in a semiconductor material. The first photodiode has a first light exposure area and a first doping concentration. The plurality of photodiodes is also disposed in the semiconductor material. Each photodiode in the plurality of photodiodes has the first light exposure area and the first doping concentration. The first transfer gate is coupled to transfer first image charge from the first photodiode to the shared floating diffusion region. The second transfer gate is coupled to transfer distributed image charge from each photodiode in the plurality of photodiodes to the shared floating diffusion region.

Abstract translation: 用于高动态范围图像传感器的图像传感器像素包括第一光电二极管，多个光电二极管，共享浮动扩散区，第一传输门和第二传输门。 第一光电二极管设置在半导体材料中。 第一光电二极管具有第一曝光区域和第一掺杂浓度。 多个光电二极管也设置在半导体材料中。 多个光电二极管中的每个光电二极管具有第一曝光区域和第一掺杂浓度。 第一传输栅极被耦合以将第一图像电荷从第一光电二极管传递到共享浮动扩散区域。 第二传输门被耦合以将分布图像电荷从多个光电二极管中的每个光电二极管传递到共享浮动扩散区域。