公开(公告)号：US20190244959A1

公开(公告)日：2019-08-08

申请号：US16384575

申请日：2019-04-15

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Yoshihiro SATO ,  Ryota SAKAIDA ,  Satoshi SHIBATA ,  Taiji NODA

IPC: H01L27/092 ,  H01L27/146

CPC classification number: H01L27/0922 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14643

Abstract: An imaging device includes: a semiconductor substrate including a first impurity region and a second impurity region; a first insulating layer on a portion of a surface of the semiconductor substrate; a second insulating layer on another portion of the surface of the semiconductor substrate, a thickness of the first insulating layer being greater than a thickness of the second insulating layer; a first transistor including: a first gate electrode facing the surface of the semiconductor substrate via the first insulating layer; the first impurity region as one of a source and a drain; and the second impurity region as the other of the source and the drain; and a photoelectric converter electrically connected to the first impurity region. The first insulating layer covers the first impurity region, and the second insulating layer covers the second impurity region.