公开(公告)号：US11195904B2

公开(公告)日：2021-12-07

申请号：US16933574

申请日：2020-07-20

申请人： PANASONIC SEMICONDUCTOR SOLUTIONS CO., LTD.

发明人： Kouki Yamamoto ,  Masatoshi Kamitani ,  Shingo Matsuda ,  Hiroshi Sugiyama ,  Kaname Motoyoshi ,  Masao Nakayama

IPC分类号： H01L29/06 ,  H01L21/50 ,  H01L23/66 ,  H01L29/423 ,  H01L29/812

摘要： A high-frequency transistor includes a source electrode, a drain electrode, a gate electrode, and a gate drive line that applies a voltage to the gate electrode. An impedance adjustment circuit is connected between the gate electrode and the gate drive line. A characteristic impedance of the gate electrode is Z1, when a connecting point between the impedance adjustment circuit and the gate electrode is viewed from the impedance adjustment circuit. A characteristic impedance of the gate drive line is Z2, when a connecting point between the impedance adjustment circuit and the gate drive line is viewed from the impedance adjustment circuit. X that denotes a characteristic impedance of the impedance adjustment circuit is a value between Z1 and Z2.