公开(公告)号：US20180226526A1

公开(公告)日：2018-08-09

申请号：US15521721

申请日：2016-09-30

申请人： PETALUX INC.

发明人： Do Yeol AHN ,  Sang Joon PARK ,  Jin Dong SONG ,  Seung Hyun YANG

IPC分类号： H01L31/0468 ,  H01L31/0336 ,  H01L31/0224 ,  H01L31/072 ,  H01L27/15 ,  H01L33/26 ,  H01L33/00 ,  H01L33/42

CPC分类号： H01L31/0468 ,  H01L21/761 ,  H01L27/156 ,  H01L29/06 ,  H01L31/0224 ,  H01L31/022475 ,  H01L31/022483 ,  H01L31/0336 ,  H01L31/0392 ,  H01L31/05 ,  H01L31/072 ,  H01L33/0008 ,  H01L33/26 ,  H01L33/42 ,  H05B33/14 ,  Y02E10/50

摘要： A trasparent PN junction device and an electronic device using the PN junction device are provided. The PN junction device to achieve above objects of the invention includes a support substrate, a capper chloride (CuCl) thin film layer, a transparent electrode layer, a first electrode and a second electrode. The capper chloride thin film layer is formed on the supporting substrate and operates as a P-type semiconductor layer. The transparent electrode layer is formed on the capper chloride thin film layer and operates as an N-type semiconductor layer. The first electrode is formed on the capper chloride thin film layer. The second electrode is formed on the transparent electrode layer. Further, the transparent electrode layer may include indium tin oxide (ITO) or indium zinc oxide (IZO).

公开(公告)号：US20180350920A1

公开(公告)日：2018-12-06

申请号：US15780369

申请日：2016-11-30

申请人： PETALUX INC.

发明人： Do Yeol AHN ,  Sang Joon PARK ,  Seung Hyun YANG ,  Jin Dong SONG

IPC分类号： H01L29/24 ,  H01L29/78 ,  H01L29/10

CPC分类号： H01L29/242 ,  H01L29/10 ,  H01L29/1025 ,  H01L29/78

摘要： A high output and high speed electronic device having low cost and high productivity is disclosed. The copper halide semiconductor based electronic device, includes a substrate, a copper halide channel layer formed on the substrate, an insulating layer formed on the copper halide channel layer, a gate electrode formed on the insulating layer, a first n+copper halide layer formed on the copper halide channel layer to be disposed at a first side of the gate electrode, the first n+copper halide layer comprising n-type impurities, a drain electrode formed on the first n+copper halide layer, a second n+copper halide layer formed on the copper halide channel layer to be disposed at a second side of the gate electrode, which is opposite to the first side, the second n+copper halide layer comprising n-type impurities, and a source electrode formed on the second n+copper halide layer.