公开(公告)号：US12021161B2

公开(公告)日：2024-06-25

申请号：US17898512

申请日：2022-08-30

申请人： KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION

发明人： Naoyuki Nakagawa ,  Yukitami Mizuno ,  Soichiro Shibasaki ,  Yuya Honishi ,  Mutsuki Yamazaki ,  Yoshiko Hiraoka ,  Kazushige Yamamoto

IPC分类号： H01L31/044 ,  H01L31/0224 ,  H01L31/032 ,  H01L31/0725

CPC分类号： H01L31/032 ,  H01L31/022483 ,  H01L31/0725

摘要： A solar cell of an embodiment includes a p-electrode; an n-electrode; a p-type light-absorbing layer located between the p-electrode and the n-electrode and mainly containing a cuprous oxide; and an n-type layer located between the first n-type layer and the n-electrode, the n-type layer including a first n-type layer and a second n-type layer or a first n-type region and a second n-type region; wherein the first n-type layer and the first n-type region is located on the p-type light-absorbing layer side, the second n-type layer and the second n-type region is located on the n-electrode side, the first n-type layer and the first n-type region mainly contain a compound represented by Gax1M1x2Ox3, the M1 is one or more selected from the group consisting of Hf, Zr, In, Zn, Ti, Al, B, Sn, Si, and Ge, the x1, the x2, and the x3 are more than 0, and the x3 when a sum of the x1 and the x2 is 2 is 3.0 or more and 3.8 or less, the second n-type layer and the second n-type region mainly contain a compound represented by Gay1Zny2M2y3M3y4Oy5, the M2 is one or more selected from the group consisting of Hf, Zr, In, Ti, Al, B, Si, and Ge, the M3 is Sn or/and Mg, the y1, the y2, the y3, and the y4 are 0 or more, a sum of the y3 and the y4 is more than 0, and the y5 when a sum of the y1, the y2, the y3, and the y4 is 2 is 2.2 or more and 3.6 or less.

公开(公告)号：US20180226526A1

公开(公告)日：2018-08-09

申请号：US15521721

申请日：2016-09-30

申请人： PETALUX INC.

发明人： Do Yeol AHN ,  Sang Joon PARK ,  Jin Dong SONG ,  Seung Hyun YANG

IPC分类号： H01L31/0468 ,  H01L31/0336 ,  H01L31/0224 ,  H01L31/072 ,  H01L27/15 ,  H01L33/26 ,  H01L33/00 ,  H01L33/42

CPC分类号： H01L31/0468 ,  H01L21/761 ,  H01L27/156 ,  H01L29/06 ,  H01L31/0224 ,  H01L31/022475 ,  H01L31/022483 ,  H01L31/0336 ,  H01L31/0392 ,  H01L31/05 ,  H01L31/072 ,  H01L33/0008 ,  H01L33/26 ,  H01L33/42 ,  H05B33/14 ,  Y02E10/50

摘要： A trasparent PN junction device and an electronic device using the PN junction device are provided. The PN junction device to achieve above objects of the invention includes a support substrate, a capper chloride (CuCl) thin film layer, a transparent electrode layer, a first electrode and a second electrode. The capper chloride thin film layer is formed on the supporting substrate and operates as a P-type semiconductor layer. The transparent electrode layer is formed on the capper chloride thin film layer and operates as an N-type semiconductor layer. The first electrode is formed on the capper chloride thin film layer. The second electrode is formed on the transparent electrode layer. Further, the transparent electrode layer may include indium tin oxide (ITO) or indium zinc oxide (IZO).

公开(公告)号：US09966495B2

公开(公告)日：2018-05-08

申请号：US14480392

申请日：2014-09-08

申请人： LG CHEM, LTD.

发明人： Jung-Sik Bang ,  Hyeon-Woo Jang ,  Jin-Hyong Lim

IPC分类号： H01L31/18 ,  C23C14/34 ,  H01L31/0224 ,  H01L31/0236 ,  H01L21/02

CPC分类号： H01L31/1884 ,  C23C14/34 ,  H01L21/02554 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/02366 ,  Y02E10/50 ,  Y10T428/24355

摘要： Disclosed are a transparent conductive layer and a transparent electrode comprising the same, and in particular, a zinc oxide-based transparent conductive layer having a textured surface, wherein the textured surface has protrusions, each protrusion having a ridge forming an arc in its protruding direction, or having an apex at an edge thereof such that two ridges forms an obtuse angle of 90° or more. The transparent conductive layer is manufactured by sputtering only without wet etching.

公开(公告)号：US09935243B2

公开(公告)日：2018-04-03

申请号：US15266990

申请日：2016-09-15

申请人： The Regents of the University of California

发明人： Asad J. Mughal ,  Sang Ho Oh ,  Steven P. DenBaars

IPC分类号： H01L33/40 ,  H01L33/42 ,  H01L33/32 ,  H01L31/0224

CPC分类号： H01L33/42 ,  H01L31/022483 ,  H01L33/32 ,  H01L2933/0016

摘要： A method for fabricating a Zinc Oxide (ZnO) conductive film on a semiconductor material, including depositing a doped ZnO seed layer on a diode, wherein the ZnO seed layer forms an electrical contact to the diode; and depositing a ZnO layer on the ZnO seed layer, wherein the ZnO seed layer and the ZnO layer each have a thickness, a crystal quality, and a doping level such that (1) the diode comprising III-nitride material is turned on with a turn on voltage of 2.75 volts or less applied across the ZnO layers and the diode, and (2) a contact resistance, of a structure comprising the ZnO layers and the diode, is lower as compared to a contact resistance of a structure comprising the ZnO layer directly on the diode without the ZnO seed layer.

公开(公告)号：US09935215B2

公开(公告)日：2018-04-03

申请号：US14803847

申请日：2015-07-20

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Keith E. Fogel ,  Augustin J. Hong ,  Jeehwan Kim ,  Devendra K. Sadana

IPC分类号： H01L31/0236 ,  H01L31/105 ,  H01L31/0224 ,  H01L31/18 ,  H01L31/0352

CPC分类号： H01L31/02363 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/02366 ,  H01L31/035281 ,  H01L31/105 ,  H01L31/1884 ,  Y02E10/50

摘要： A photovoltaic device includes a substrate layer having a plurality of three-dimensional structures formed therein providing a textured profile. A first electrode is formed over the substrate layer and extends over the three-dimensional structures including non-planar surfaces. The first electrode has a thickness configured to maintain the textured profile, and the first electrode includes a transparent conductive material having a dopant metal activated within the transparent conductive material. A continuous photovoltaic stack is conformally formed over the first electrode, and a second electrode is formed on the photovoltaic stack.

公开(公告)号：US09865762B2

公开(公告)日：2018-01-09

申请号：US14430540

申请日：2013-09-27

申请人： KANEKA CORPORATION

发明人： Tomomi Meguro ,  Kenji Yamamoto

IPC分类号： H01L31/0224 ,  H01L31/077 ,  H01L31/0236 ,  H01L31/0392 ,  H01L31/0376 ,  H01L31/18 ,  H01L31/076 ,  H01L31/0368 ,  H01L31/075 ,  H01L31/0745 ,  H01L31/0747

CPC分类号： H01L31/077 ,  H01L31/022483 ,  H01L31/02366 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/03765 ,  H01L31/03921 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/075 ,  H01L31/076 ,  H01L31/1804 ,  H01L31/1888 ,  Y02E10/545 ,  Y02E10/548

摘要： The thin-film photoelectric conversion device of the present invention includes: a transparent electroconductive film having zinc oxide as a main component; a contact layer; a photoelectric conversion unit having a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer in this order; and a back electrode layer, in this order, on one main surface of a substrate. The contact layer has an intrinsic crystalline semiconductor layer and a p-type crystalline semiconductor layer in this order from the substrate side, and the intrinsic crystalline semiconductor layer of the contact layer and the transparent electroconductive film are in contact with each other. The p-type crystalline semiconductor layer of the contact layer is preferably a layer having as a main component a silicon alloy selected from the group consisting of a silicon oxide; a silicon nitride; and silicon carbide.

公开(公告)号：US20170373213A1

公开(公告)日：2017-12-28

申请号：US15189368

申请日：2016-06-22

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： TALIA S. GERSHON ,  RICHARD A. HAIGHT ,  RAVIN MANKAD ,  SAURABH SINGH ,  TEODOR K. TODOROV

IPC分类号： H01L31/072 ,  H01L31/0272 ,  H01L31/0224 ,  H01L31/18 ,  H01L31/075

CPC分类号： H01L31/072 ,  H01L31/022466 ,  H01L31/022475 ,  H01L31/022483 ,  H01L31/0272 ,  H01L31/1864 ,  H01L31/1884 ,  Y02E10/50 ,  Y02P70/521

摘要： A photovoltaic device with an improved n-type partner and a method for making the same. The device includes: a transparent substrate; a transparent conductive electrode layer disposed on the transparent substrate; an n-type layer of Zn1-xMgxO, wherein 0

公开(公告)号：US20170288071A1

公开(公告)日：2017-10-05

申请号：US15622515

申请日：2017-06-14

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： KEITH E. FOGEL ,  AUGUSTIN J. HONG ,  JEEHWAN KIM ,  DEVENDRA K. SADANA

IPC分类号： H01L31/0236 ,  H01L31/0224 ,  H01L31/075 ,  H01L31/077 ,  H01L31/0376 ,  H01L31/0352 ,  H01L31/18

CPC分类号： H01L31/02366 ,  H01L31/022483 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/03762 ,  H01L31/075 ,  H01L31/077 ,  H01L31/1804 ,  H01L31/1888 ,  Y02E10/50

摘要： A photovoltaic device and method include forming a plurality of pillar structures in a substrate, forming a first electrode layer on the pillar structures and forming a continuous photovoltaic stack including an N-type layer, a P-type layer and an intrinsic layer on the first electrode. A second electrode layer is deposited over the photovoltaic stack such that gaps or fissures occur in the second electrode layer between the pillar structures. The second electrode layer is wet etched to open up the gaps or fissures and reduce the second electrode layer to form a three-dimensional electrode of substantially uniform thickness over the photovoltaic stack.

公开(公告)号：US20170236965A1

公开(公告)日：2017-08-17

申请号：US15327385

申请日：2015-07-21

申请人： Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH

发明人： Sven Ring ,  Moshe Weizman ,  Holger Rhein ,  Christof Schultz ,  Frank Fink ,  Stefan Gall ,  Rutger Schlatmann

IPC分类号： H01L31/061 ,  H01L31/0445 ,  H01L31/0368 ,  H01L31/0224 ,  H01L31/0376 ,  H01L31/18 ,  H01L31/0216

CPC分类号： H01L31/061 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/022475 ,  H01L31/022483 ,  H01L31/03682 ,  H01L31/03762 ,  H01L31/0445 ,  H01L31/046 ,  H01L31/056 ,  H01L31/0747 ,  H01L31/1864 ,  H01L31/1868 ,  H01L31/1872 ,  H01L31/1884 ,  Y02E10/52

摘要： A method for producing a rear-side contact system for a silicon thin-film solar cell having pn junction formed from a silicon absorber layer and an emitter layer includes applying an organic insulation layer to the emitter layer; producing contact holes in the insulation layer as far as the absorber layer and the emitter layer; subsequently insulating the contact holes; subsequently applying a low-melting metal layer to form n and p contacts in the contact holes; separating the metal layer into n-contacting and p-contacting regions by laser-cutting; before applying the organic insulation layer to the emitter layer, applying a TCO layer; producing holes for contacts for the silicon absorber layer in the organic insulation; and subsequently selectively doping the produced holes for the contacts as far as the silicon absorber layer.

公开(公告)号：US09640687B2

公开(公告)日：2017-05-02

申请号：US14892462

申请日：2014-05-23

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

发明人： Giovanni Altamura ,  Louis Grenet ,  Simon Perraud ,  Frédéric Roux

IPC分类号： H01L31/0392 ,  H01L31/032 ,  H01L31/072 ,  H01L31/0749 ,  H01L31/0224 ,  H01L31/18

CPC分类号： H01L31/03923 ,  H01L31/022483 ,  H01L31/0322 ,  H01L31/0326 ,  H01L31/0392 ,  H01L31/072 ,  H01L31/0749 ,  H01L31/1864 ,  H01L31/1884 ,  Y02E10/541 ,  Y02P70/521

摘要： A method for producing a P-N junction in a thin film photovoltaic cell comprising a deposition step in which are carried out successively: a layer of precursors of a photovoltaic material of type P or N, a barrier layer and a layer of precursors of a semiconducting material of type N or P, this deposition step being followed by an annealing step carried out with a supply of S and/or Se, this annealing step leading to the formation of an absorbing layer of the type P or N and of a buffer layer of type N or P and of a P-N junction at the interface between said layers.