公开(公告)号：US20230071292A1

公开(公告)日：2023-03-09

申请号：US17903757

申请日：2022-09-06

Applicant: PIEZO STUDIO INC. ,  UNIVERSITY OF YAMANASHI

Inventor： Shoji KAKIO ,  Noritoshi KIMURA

IPC: H03H9/02 ,  H03H9/145

Abstract: A surface acoustic wave device includes a piezoelectric substrate formed from a Ca3Ta(Ga1-xAlx)3Si2O14 single crystal, and an interdigital electrode formed on the surface of the piezoelectric substrate and formed from Al. The interdigital electrode is configured to generate a Love-wave-type SH wave on the surface of the piezoelectric substrate. A normalized film thickness obtained by dividing the film thickness of the interdigital electrode by the wavelength of the Love-wave-type SH wave is 0.16 or less.

公开(公告)号：US20230117944A1

公开(公告)日：2023-04-20

申请号：US17966879

申请日：2022-10-16

Applicant: THE JAPAN STEEL WORKS, LTD. ,  UNIVERSITY OF YAMANASHI

Inventor： Kazuhito KISHIDA ,  Shoji KAKIO ,  Hiroaki YOKOTA ,  Takuya MARUKO ,  Kengo OGAWA

IPC: H03H9/02

Abstract: In a bonded substrate according to an embodiment, Euler angles (φ1, θ1, ψ1) of a first quartz-crystal substrate satisfy 0°≤φ1≤2°, 123°≤θ1≤128°, and 31°≤ψ1≤44°, Euler angles (φ2, θ2, ψ2) of a second quartz-crystal substrate bonded over the first quartz-crystal substrate satisfy 83°≤φ2≤95°, 82°≤θ2≤95°, and 159°≤ψ2≤161°, and a thickness of the second quartz-crystal substrate is 0.17 to 0.19 times a wavelength of a surface acoustic wave.

公开(公告)号：US20220069799A1

公开(公告)日：2022-03-03

申请号：US17415475

申请日：2019-12-19

Applicant: Sanan Japan Technology Corporation ,  UNIVERSITY OF YAMANASHI

Inventor： Noriyuki WATANABE ,  Hiroshi NAKAMURA ,  Shoji KAKIO

IPC: H03H9/17 ,  H03H9/13 ,  H03H9/54 ,  H03H9/70

Abstract: An elastic wave device that excites main vibration of an SH mode includes a piezoelectric layer formed from a piezoelectric material, a carrier substrate, and an IDT electrode formed on the piezoelectric layer. When a wavelength of an elastic wave, which is determined by an electrode cycle P of the IDT electrode, is represented by λ, the piezoelectric layer has a thickness of 0.15λ or more and 1.5λ or less. The carrier substrate has an acoustic anisotropy, and is arranged in a crystal orientation that reduces unnecessary vibrations of an SV mode and a vertical L-mode.