公开(公告)号：US20230071292A1

公开(公告)日：2023-03-09

申请号：US17903757

申请日：2022-09-06

Applicant: PIEZO STUDIO INC. ,  UNIVERSITY OF YAMANASHI

Inventor： Shoji KAKIO ,  Noritoshi KIMURA

IPC: H03H9/02 ,  H03H9/145

Abstract: A surface acoustic wave device includes a piezoelectric substrate formed from a Ca3Ta(Ga1-xAlx)3Si2O14 single crystal, and an interdigital electrode formed on the surface of the piezoelectric substrate and formed from Al. The interdigital electrode is configured to generate a Love-wave-type SH wave on the surface of the piezoelectric substrate. A normalized film thickness obtained by dividing the film thickness of the interdigital electrode by the wavelength of the Love-wave-type SH wave is 0.16 or less.

公开(公告)号：US20250158570A1

公开(公告)日：2025-05-15

申请号：US18943436

申请日：2024-11-11

Applicant: Inter-University Research Institute Corporation High Energy Accelerator Research Organization ,  Piezo Studio Inc.

Inventor： Masaya NOHARA ,  Takehito ISHI ,  Noritoshi KIMURA

IPC: H03B5/06 ,  H03B5/36

Abstract: The oscillation circuit 1 comprises: an oscillator X1; a first capacitance CF having one end connected to the oscillator X1; a second capacitance CO having one end connected to the other end of the first capacitance CF; an output terminal Vo connected to a connection point N2 of the first capacitance CF and the second capacitance CO; an amplifier circuit A1 connected between a node between the oscillator X1 and the first capacitance CF and a connection point N2 of the first capacitance CF and the second capacitance CO to form an oscillation loop together with the first capacitance CF; a differential amplifier circuit A2 arranged on the oscillation loop; and a feedback path 3 configured to feed a part of an output on the output terminal Vo to the differential amplifier circuit A2.

公开(公告)号：US20230291355A1

公开(公告)日：2023-09-14

申请号：US18006122

申请日：2021-05-07

Applicant: PIEZO STUDIO INC. ,  INTER-UNIVERSITY RESEARCH INSTITUTE CORPORATION HIGH ENERGY ACCELERATOR RESEARCH ORGANIZATION

Inventor： Masaya NOHARA ,  Noritoshi KIMURA

IPC: H03B5/36

CPC classification number: H03B5/364 ,  H03B2200/0082 ,  H03B2200/0012

Abstract: An oscillation circuit includes an oscillator (X1), capacitors (C1, C2) connected between two terminals of the oscillator (X1), and an amplification circuit (A1) having an input terminal connected to a connecting point between the oscillator (X1) and the capacitor (C1) and an output terminal connected to a connecting point between the capacitor (C1) and the capacitor (C2). The amplification circuit (A1) includes an n-type transistor (M1) and a p-type transistor (M2) respectively having source terminals, the connecting point of which is connected to the output terminal of the amplification circuit (A1), a p-type transistor (M3) configured to connect a gate terminal of the n-type transistor (M1) to a power supply terminal at the time of an oscillation stop and disconnect the power supply terminal and the gate terminal of the n-type transistor (M1) at the time of an oscillation operation, and an n-type transistor (M4) configured to connect a gate terminal of the p-type transistor (M2) to ground at the time of the oscillation stop and disconnect a ground terminal and the gate terminal of the p-type transistor (M2) at the time of the oscillation operation. It is possible to implement low power consumption and high-speed oscillation activation of the oscillation circuit.