公开(公告)号：US12255610B2

公开(公告)日：2025-03-18

申请号：US17903757

申请日：2022-09-06

Applicant: PIEZO STUDIO INC. ,  UNIVERSITY OF YAMANASHI

Inventor： Shoji Kakio ,  Noritoshi Kimura

IPC: H03H9/02 ,  H03H9/145

Abstract: A surface acoustic wave device includes a piezoelectric substrate formed from a Ca3Ta(Ga1-xAlx)3Si2O14 single crystal, and an interdigital electrode formed on the surface of the piezoelectric substrate and formed from Al. The interdigital electrode is configured to generate a Love-wave-type SH wave on the surface of the piezoelectric substrate. A normalized film thickness obtained by dividing the film thickness of the interdigital electrode by the wavelength of the Love-wave-type SH wave is 0.16 or less.

公开(公告)号：US11979139B2

公开(公告)日：2024-05-07

申请号：US17415475

申请日：2019-12-19

Applicant: SANAN JAPAN TECHNOLOGY CORPORATION ,  UNIVERSITY OF YAMANASHI

Inventor： Noriyuki Watanabe ,  Hiroshi Nakamura ,  Shoji Kakio

IPC: H03H9/17 ,  H03H9/13 ,  H03H9/54 ,  H03H9/70

CPC classification number: H03H9/17 ,  H03H9/13 ,  H03H9/54 ,  H03H9/70

Abstract: An elastic wave device that excites main vibration of an SH mode includes a piezoelectric layer formed from a piezoelectric material, a carrier substrate, and an IDT electrode formed on the piezoelectric layer. When a wavelength of an elastic wave, which is determined by an electrode cycle P of the IDT electrode, is represented by λ, the piezoelectric layer has a thickness of 0.15λ or more and 1.5λ or less. The carrier substrate has an acoustic anisotropy, and is arranged in a crystal orientation that reduces unnecessary vibrations of an SV mode and a vertical L-mode.